公开(公告)号：US10651031B2

公开(公告)日：2020-05-12

申请号：US16183927

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L23/52 ,  H01L21/44 ,  H01L21/02 ,  H01L49/02 ,  H01L21/768 ,  H01L21/285 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US10242877B2

公开(公告)日：2019-03-26

申请号：US15423027

申请日：2017-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho

IPC: H01L21/00 ,  H01L21/285 ,  H01L49/02 ,  H01L27/11582 ,  H01L29/66

Abstract: Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device.

公开(公告)号：US10259836B2

公开(公告)日：2019-04-16

申请号：US15363088

申请日：2016-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  L'Air Liquide, Societe Anonyme Pour L'etude et L'exploitation des Procedes Georges Claude

Inventor： Jae-soon Lim ,  Gyu-hee Park ,  Youn-joung Cho ,  Clement Lansalot ,  Won-tae Noh ,  Julien Lieffrig ,  Joo-ho Lee

IPC: C23C16/28 ,  C07F17/00 ,  C09D5/24 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L27/108 ,  H01L49/02 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L)  Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is a formamidinate, an amidinate, or a guanidinate.

公开(公告)号：US10224200B2

公开(公告)日：2019-03-05

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Sang-ick Lee ,  Sung-duck Lee ,  Sung-woo Cho

IPC: H01L21/02 ,  C07F5/06 ,  C09D1/00 ,  C09D5/24 ,  H01L21/311 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

公开(公告)号：US10134582B2

公开(公告)日：2018-11-20

申请号：US15298275

申请日：2016-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L21/44 ,  H01L23/52 ,  H01L21/02 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US10913754B2

公开(公告)日：2021-02-09

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Kazuki Harano ,  Haruyoshi Sato ,  Tsubasa Shiratori ,  Naoki Yamada

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  C23C16/40 ,  H01L21/02 ,  H01L29/78 ,  H01L51/05 ,  H01L29/66

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US10882873B2

公开(公告)日：2021-01-05

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Kang-yong Lee ,  Sang-ick Lee ,  Sang-yong Jeon

IPC: C07F7/22 ,  C23C16/455 ,  C23C16/40

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US10752645B2

公开(公告)日：2020-08-25

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10 ,  C23C16/40 ,  C23C16/455

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US10600643B2

公开(公告)日：2020-03-24

申请号：US15866568

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Hyun-jun Kim ,  Jin-sun Lee ,  Jae-soon Lim

IPC: H01L21/02 ,  C23C16/40 ,  H01L27/11582 ,  H01L27/108 ,  C23C16/455 ,  C23C16/06 ,  C23C16/02 ,  H01L21/28 ,  H01L27/1157

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

公开(公告)号：US10329312B2

公开(公告)日：2019-06-25

申请号：US15092953

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.