公开(公告)号：US10913754B2

公开(公告)日：2021-02-09

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Kazuki Harano ,  Haruyoshi Sato ,  Tsubasa Shiratori ,  Naoki Yamada

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  C23C16/40 ,  H01L21/02 ,  H01L29/78 ,  H01L51/05 ,  H01L29/66

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US10242877B2

公开(公告)日：2019-03-26

申请号：US15423027

申请日：2017-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho

IPC: H01L21/00 ,  H01L21/285 ,  H01L49/02 ,  H01L27/11582 ,  H01L29/66

Abstract: Provided are an aluminum compound represented by General Formula (I), a method of forming a thin film, and a method of fabricating an integrated circuit device.

公开(公告)号：US20170198001A1

公开(公告)日：2017-07-13

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  H01L21/285 ,  C23C16/455 ,  C09D1/00 ,  C23C16/06

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US20150228663A1

公开(公告)日：2015-08-13

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/285 ,  H01L29/49 ,  H01L21/768

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。

公开(公告)号：US11081389B2

公开(公告)日：2021-08-03

申请号：US16711845

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Younsoo Kim ,  Gyu-hee Park ,  Jaesoon Lim ,  Younjoung Cho

IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

公开(公告)号：US10259836B2

公开(公告)日：2019-04-16

申请号：US15363088

申请日：2016-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  L'Air Liquide, Societe Anonyme Pour L'etude et L'exploitation des Procedes Georges Claude

Inventor： Jae-soon Lim ,  Gyu-hee Park ,  Youn-joung Cho ,  Clement Lansalot ,  Won-tae Noh ,  Julien Lieffrig ,  Joo-ho Lee

IPC: C23C16/28 ,  C07F17/00 ,  C09D5/24 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L27/108 ,  H01L49/02 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A method of forming a thin film includes forming a niobium-containing film on a substrate by using a niobium precursor composition and a reactant, the niobium precursor composition including a niobium compound represented by Formula (1): Nb(R5Cp)2(L)  Formula (1) (where each R is independently H, a C1 to C6 alkyl group, or R13Si, with each R1 being independently H or a C1 to C6 alkyl group, Cp is a cyclopentadienyl group, and L is a formamidinate, an amidinate, or a guanidinate.

公开(公告)号：US10224200B2

公开(公告)日：2019-03-05

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee Park ,  Jae-soon Lim ,  Youn-joung Cho ,  Myong-woon Kim ,  Sang-ick Lee ,  Sung-duck Lee ,  Sung-woo Cho

IPC: H01L21/02 ,  C07F5/06 ,  C09D1/00 ,  C09D5/24 ,  H01L21/311 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

公开(公告)号：US09637511B2

公开(公告)日：2017-05-02

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C23C16/06 ,  C07F15/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

公开(公告)号：US20150266913A1

公开(公告)日：2015-09-24

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  C23C16/06 ,  C23C16/50

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。

公开(公告)号：US10752645B2

公开(公告)日：2020-08-25

申请号：US16439369

申请日：2019-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10 ,  C23C16/40 ,  C23C16/455

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.