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1.发明公开公开(公告)号：US20230220213A1
公开(公告)日：2023-07-13
申请号：US18145142
申请日：2022-12-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： JAE WOON KIM , Seung-min Ryu , Haruyoshi Sato , Kazuya Saito , Masayuki Kimura , Takahiro Yoshii , Tsubasa Shiratori , Min Jae Sung , Gyu-Hee Park , Youn Joung Cho
CPC classification number: C09D1/00 , C07F3/003 , H10B12/033
Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1:
M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.-
公开(公告)号：US09359383B2
公开(公告)日：2016-06-07
申请号：US14319554
申请日：2014-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youn-Joung Cho , Senji Wada , Jung-Sik Choi , Jin-Seo Lee , Atsushi Sakurai , Kyoo-Chul Cho , Atsuya Yoshinaka , Haruyoshi Sato , Junji Ueyama , Tomoharu Yoshino , Masako Shimizu
IPC: C07C249/02 , C07F3/00 , C07C251/08 , C23C16/18
CPC classification number: C07F3/003 , C07C249/02 , C07C251/08 , C23C16/18
Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.
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公开(公告)号：US10752645B2
公开(公告)日：2020-08-25
申请号：US16439369
申请日：2019-06-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Haruyoshi Sato , Naoki Yamada , Hiroyuki Uchiuzou
IPC: C07F7/10 , C23C16/40 , C23C16/455
Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
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公开(公告)号：US10329312B2
公开(公告)日：2019-06-25
申请号：US15092953
申请日：2016-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Haruyoshi Sato , Naoki Yamada , Hiroyuki Uchiuzou
IPC: C07F7/10
Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
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公开(公告)号：US09790246B2
公开(公告)日：2017-10-17
申请号：US15468276
申请日：2017-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
IPC: C07F15/00 , C07F15/04 , C09D1/00 , C23C16/06 , C23C16/455 , H01L21/285
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
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Patent Agency Ranking
公开(公告)号：US11746121B2
公开(公告)日：2023-09-05
申请号：US17072096
申请日：2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyuhee Park , Younjoung Cho , Haruyoshi Sato , Kazuki Harano , Hiroyuki Uchiuzou
CPC classification number: C07F11/00 , C01B21/062 , C01G39/02 , C23C16/34 , C23C16/405
Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
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公开(公告)号：US09637511B2
公开(公告)日：2017-05-02
申请号：US14622948
申请日：2015-02-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
IPC: C23C16/06 , C07F15/04 , C23C16/455 , C23C16/56 , H01L21/285
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.
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8.发明授权β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same 有权酮骨架配体，其制备方法，包含其的金属络合物和使用其制备薄膜的方法公开(公告)号：US09359382B2
公开(公告)日：2016-06-07
申请号：US14317102
申请日：2014-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youn-Joung Cho , Senji Wada , Jung-Sik Choi , Jin-Seo Lee , Atsushi Sakurai , Kyoo-Chul Cho , Atsuya Yoshinaka , Haruyoshi Sato , Junji Ueyama , Tomoharu Yoshino , Masako Shimizu
IPC: C23C16/06 , C07F3/00 , C07C249/02 , C07C251/08 , C23C16/18
CPC classification number: C07F3/003 , C07C249/02 , C07C251/08 , C23C16/18
Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.
Abstract translation: 酮亚胺配体由下式1表示：其中R 1和R 2各自独立地为C 1 -C 5烷基。 金属络合物包括β-酮亚胺配体。 提供了形成β-酮亚胺配体的方法以及使用包括β-酮亚胺配体的金属络合物形成薄膜的方法。
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9.发明申请公开(公告)号：US20150266913A1
公开(公告)日：2015-09-24
申请号：US14622948
申请日：2015-02-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。
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公开(公告)号：US10913754B2
公开(公告)日：2021-02-09
申请号：US16251236
申请日：2019-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Kazuki Harano , Haruyoshi Sato , Tsubasa Shiratori , Naoki Yamada
IPC: C07F5/00 , C23C16/455 , C23C16/34 , H01L27/28 , H01L51/00 , C23C16/40 , H01L21/02 , H01L29/78 , H01L51/05 , H01L29/66
Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.
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