公开(公告)号：US09637511B2

公开(公告)日：2017-05-02

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C23C16/06 ,  C07F15/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

公开(公告)号：US20150266913A1

公开(公告)日：2015-09-24

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  C23C16/06 ,  C23C16/50

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。

公开(公告)号：US11524973B2

公开(公告)日：2022-12-13

申请号：US16857292

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Akio Saito ,  Takanori Koide ,  Atsushi Yamashita ,  Kazuki Harano ,  Gyu-Hee Park ,  Soyoung Lee ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F9/00 ,  H01L21/285 ,  H01L51/00 ,  H01L49/02

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

公开(公告)号：US10134582B2

公开(公告)日：2018-11-20

申请号：US15298275

申请日：2016-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L21/44 ,  H01L23/52 ,  H01L21/02 ,  C07F9/00 ,  C23C16/16 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

公开(公告)号：US11466043B2

公开(公告)日：2022-10-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Seungmin Ryu ,  Gyuhee Park ,  Jaesoon Lim ,  Younjoung Cho ,  Akio Saito ,  Wakana Fuse ,  Yutaro Aoki ,  Takanori Koide

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06 ,  H01L21/28 ,  H01L49/02 ,  H01L21/285

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US20200207790A1

公开(公告)日：2020-07-02

申请号：US16564125

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd. ,  Adeka Corporation

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  H01L21/02 ,  C23C16/20

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US11332486B2

公开(公告)日：2022-05-17

申请号：US16564125

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ADEKA CORPORATION

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  C23C16/20 ,  H01L21/02

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US20210380622A1

公开(公告)日：2021-12-09

申请号：US17215056

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd. ,  ADEKA CORPORATION

Inventor： Seung-Min Ryu ,  Gyu-Hee Park ,  Youn Joung Cho ,  Kazuki Harano ,  Takanori Koide ,  Wakana Fuse ,  Yoshiki Manabe ,  Yutaro Aoki ,  Hiroyuki Uchiuzou ,  Kazuya Saito

IPC: C07F17/00 ,  C23C16/18 ,  C23C16/455

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US09790246B2

公开(公告)日：2017-10-17

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/00 ,  C07F15/04 ,  C09D1/00 ,  C23C16/06 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US10651031B2

公开(公告)日：2020-05-12

申请号：US16183927

申请日：2018-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Takanori Koide ,  Naoki Yamada ,  Jae-soon Lim ,  Tsubasa Shiratori ,  Youn-joung Cho

IPC: H01L23/52 ,  H01L21/44 ,  H01L21/02 ,  H01L49/02 ,  H01L21/768 ,  H01L21/285 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):