公开(公告)号：US11524973B2

公开(公告)日：2022-12-13

申请号：US16857292

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Akio Saito ,  Takanori Koide ,  Atsushi Yamashita ,  Kazuki Harano ,  Gyu-Hee Park ,  Soyoung Lee ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F9/00 ,  H01L21/285 ,  H01L51/00 ,  H01L49/02

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

公开(公告)号：US10900119B2

公开(公告)日：2021-01-26

申请号：US15855368

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Jaesoon Lim ,  Jieun Yun ,  Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C23C16/30 ,  C07F11/00 ,  C23C16/455 ,  C23C16/40

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

公开(公告)号：US11332486B2

公开(公告)日：2022-05-17

申请号：US16564125

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ADEKA CORPORATION

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  C23C16/20 ,  H01L21/02

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US09790246B2

公开(公告)日：2017-10-17

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/00 ,  C07F15/04 ,  C09D1/00 ,  C23C16/06 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US11466043B2

公开(公告)日：2022-10-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Seungmin Ryu ,  Gyuhee Park ,  Jaesoon Lim ,  Younjoung Cho ,  Akio Saito ,  Wakana Fuse ,  Yutaro Aoki ,  Takanori Koide

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06 ,  H01L21/28 ,  H01L49/02 ,  H01L21/285

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US20200207790A1

公开(公告)日：2020-07-02

申请号：US16564125

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd. ,  Adeka Corporation

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  H01L21/02 ,  C23C16/20

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US09637511B2

公开(公告)日：2017-05-02

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C23C16/06 ,  C07F15/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

公开(公告)号：US20150266913A1

公开(公告)日：2015-09-24

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  C23C16/06 ,  C23C16/50

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。

公开(公告)号：US20180363131A1

公开(公告)日：2018-12-20

申请号：US15855368

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Jaesoon Lim ,  Jieun Yun ,  Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C23C16/30 ,  C07F11/00

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

公开(公告)号：US20170198001A1

公开(公告)日：2017-07-13

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  H01L21/285 ,  C23C16/455 ,  C09D1/00 ,  C23C16/06

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.