公开(公告)号：US10900119B2

公开(公告)日：2021-01-26

申请号：US15855368

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Jaesoon Lim ,  Jieun Yun ,  Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C23C16/30 ,  C07F11/00 ,  C23C16/455 ,  C23C16/40

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

公开(公告)号：US20180363131A1

公开(公告)日：2018-12-20

申请号：US15855368

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Jaesoon Lim ,  Jieun Yun ,  Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C23C16/30 ,  C07F11/00

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.