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公开(公告)号：US10134582B2
公开(公告)日：2018-11-20
申请号：US15298275
申请日：2016-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung-min Ryu , Takanori Koide , Naoki Yamada , Jae-soon Lim , Tsubasa Shiratori , Youn-joung Cho
IPC: H01L21/44 , H01L23/52 , H01L21/02 , C07F9/00 , C23C16/16 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455
Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
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公开(公告)号：US10752645B2
公开(公告)日：2020-08-25
申请号：US16439369
申请日：2019-06-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Haruyoshi Sato , Naoki Yamada , Hiroyuki Uchiuzou
IPC: C07F7/10 , C23C16/40 , C23C16/455
Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
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公开(公告)号：US10329312B2
公开(公告)日：2019-06-25
申请号：US15092953
申请日：2016-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Haruyoshi Sato , Naoki Yamada , Hiroyuki Uchiuzou
IPC: C07F7/10
Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
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公开(公告)号：US09790246B2
公开(公告)日：2017-10-17
申请号：US15468276
申请日：2017-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
IPC: C07F15/00 , C07F15/04 , C09D1/00 , C23C16/06 , C23C16/455 , H01L21/285
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
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公开(公告)号：US10913754B2
公开(公告)日：2021-02-09
申请号：US16251236
申请日：2019-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Kazuki Harano , Haruyoshi Sato , Tsubasa Shiratori , Naoki Yamada
IPC: C07F5/00 , C23C16/455 , C23C16/34 , H01L27/28 , H01L51/00 , C23C16/40 , H01L21/02 , H01L29/78 , H01L51/05 , H01L29/66
Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.
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Patent Agency Ranking
公开(公告)号：US10651031B2
公开(公告)日：2020-05-12
申请号：US16183927
申请日：2018-11-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung-min Ryu , Takanori Koide , Naoki Yamada , Jae-soon Lim , Tsubasa Shiratori , Youn-joung Cho
IPC: H01L23/52 , H01L21/44 , H01L21/02 , H01L49/02 , H01L21/768 , H01L21/285 , H01L29/66 , H01L29/78 , H01L21/8238
Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):
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公开(公告)号：US20170198001A1
公开(公告)日：2017-07-13
申请号：US15468276
申请日：2017-03-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
IPC: C07F15/04 , H01L21/285 , C23C16/455 , C09D1/00 , C23C16/06
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
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8.发明授权Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same 有权铝前体，形成薄膜的方法和使用该前体形成电容器的方法公开(公告)号：US09472345B2
公开(公告)日：2016-10-18
申请号：US14176173
申请日：2014-02-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Chul Youn , Atsushi Sakurai , Masako Hatase , Youn-Joung Cho , Ji-Na Kang , Naoki Yamada , Jung-Sik Choi
CPC classification number: H01G4/33 , H01G4/085 , H01G4/1272 , H01L27/10852 , H01L28/40
Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.
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公开(公告)号：US09637511B2
公开(公告)日：2017-05-02
申请号：US14622948
申请日：2015-02-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
IPC: C23C16/06 , C07F15/04 , C23C16/455 , C23C16/56 , H01L21/285
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.
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10.发明申请公开(公告)号：US20150266913A1
公开(公告)日：2015-09-24
申请号：US14622948
申请日：2015-02-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-chul Youn , Gyu-hee Park , Youn-joung Cho , Haruyoshi Sato , Takanori Koide , Naoki Yamada , Akio Saito , Akihiro Nishida
CPC classification number: C07F15/045 , C09D1/00 , C23C16/06 , C23C16/45553 , C23C16/56 , H01L21/28518 , H01L21/28556
Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.
Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。
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