公开(公告)号：US09637511B2

公开(公告)日：2017-05-02

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C23C16/06 ,  C07F15/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

公开(公告)号：US20150266913A1

公开(公告)日：2015-09-24

申请号：US14622948

申请日：2015-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  C23C16/06 ,  C23C16/50

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract translation: 提供了包含脒基配体和脂族烷氧基的异质结构的镍化合物以及形成包含异质结构化镍化合物的薄膜的方法。 该方法包括通过使用包含脒基配位体和脂肪族烷氧基的异质结构化镍化合物在基材上形成含镍层。

公开(公告)号：US09790246B2

公开(公告)日：2017-10-17

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/00 ,  C07F15/04 ,  C09D1/00 ,  C23C16/06 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US09391089B2

公开(公告)日：2016-07-12

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/768 ,  H01L21/285 ,  H01L29/49 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。

公开(公告)号：US20170198001A1

公开(公告)日：2017-07-13

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/04 ,  H01L21/285 ,  C23C16/455 ,  C09D1/00 ,  C23C16/06

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US20150228663A1

公开(公告)日：2015-08-13

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/285 ,  H01L29/49 ,  H01L21/768

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。