公开(公告)号：US10319590B2

公开(公告)日：2019-06-11

申请号：US15294818

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cha-won Ko ,  Hyun-woo Kim ,  Youn-joung Cho ,  Jin-kyu Han

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.