公开(公告)号：US10978552B2

公开(公告)日：2021-04-13

申请号：US16273603

申请日：2019-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo Kang ,  Sang-yeol Kang ,  Youn-soo Kim ,  Jin-su Lee ,  Hyung-suk Jung ,  Kyu-ho Cho

IPC: H01L49/02 ,  H01L21/285 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/321 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US10297600B2

公开(公告)日：2019-05-21

申请号：US15956287

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/00 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US20170352666A1

公开(公告)日：2017-12-07

申请号：US15410488

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US20200243531A1

公开(公告)日：2020-07-30

申请号：US16826346

申请日：2020-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US10468256B2

公开(公告)日：2019-11-05

申请号：US15482005

申请日：2017-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min Moon ,  Youn-soo Kim ,  Han-jin Lim ,  Yong-jae Lee ,  Se-hoon Oh ,  Hyun-jun Kim ,  Jin-sun Lee

IPC: C23C16/40 ,  H01L21/28 ,  H01L29/40 ,  C23C16/04 ,  C23C16/455 ,  C23C16/44 ,  H01L21/02 ,  H01L27/108 ,  H01L27/11582 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

公开(公告)号：US11043553B2

公开(公告)日：2021-06-22

申请号：US16520912

申请日：2019-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-soo Kim ,  Seung-min Ryu ,  Chang-su Woo ,  Hyung-suk Jung ,  Kyu-ho Cho ,  Youn-joung Cho

IPC: H01L21/02 ,  H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

公开(公告)号：US20190267384A1

公开(公告)日：2019-08-29

申请号：US16412870

申请日：2019-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US11177263B2

公开(公告)日：2021-11-16

申请号：US16826346

申请日：2020-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US10913754B2

公开(公告)日：2021-02-09

申请号：US16251236

申请日：2019-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Kazuki Harano ,  Haruyoshi Sato ,  Tsubasa Shiratori ,  Naoki Yamada

IPC: C07F5/00 ,  C23C16/455 ,  C23C16/34 ,  H01L27/28 ,  H01L51/00 ,  C23C16/40 ,  H01L21/02 ,  H01L29/78 ,  H01L51/05 ,  H01L29/66

Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

公开(公告)号：US10103026B2

公开(公告)日：2018-10-16

申请号：US15227089

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min Moon ,  Youn-soo Kim ,  Han-jin Lim ,  Yong-jae Lee ,  Se-hoon Oh ,  Hyun-jun Kim ,  Jin-sun Lee

IPC: H01L21/28 ,  H01L29/40 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.