公开(公告)号：US20180240800A1

公开(公告)日：2018-08-23

申请号：US15956287

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US20190267384A1

公开(公告)日：2019-08-29

申请号：US16412870

申请日：2019-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US10297600B2

公开(公告)日：2019-05-21

申请号：US15956287

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/00 ,  H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US20170352666A1

公开(公告)日：2017-12-07

申请号：US15410488

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US11177263B2

公开(公告)日：2021-11-16

申请号：US16826346

申请日：2020-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US10103026B2

公开(公告)日：2018-10-16

申请号：US15227089

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min Moon ,  Youn-soo Kim ,  Han-jin Lim ,  Yong-jae Lee ,  Se-hoon Oh ,  Hyun-jun Kim ,  Jin-sun Lee

IPC: H01L21/28 ,  H01L29/40 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

公开(公告)号：US09978753B2

公开(公告)日：2018-05-22

申请号：US15410488

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/00 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US10825893B2

公开(公告)日：2020-11-03

申请号：US16003675

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-ho Cho ,  Sang-yeol Kang ,  Sun-min Moon ,  Young-lim Park ,  Jong-bom Seo

IPC: H01L49/02 ,  H01L21/02 ,  H01L29/06 ,  H01L27/108

Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

公开(公告)号：US20200243531A1

公开(公告)日：2020-07-30

申请号：US16826346

申请日：2020-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-hyoung Ahn ,  Youn-soo Kim ,  Jae-hyoung Choi ,  Jae-wan Chang ,  Sun-min Moon ,  Jin-sun Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

公开(公告)号：US10468256B2

公开(公告)日：2019-11-05

申请号：US15482005

申请日：2017-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min Moon ,  Youn-soo Kim ,  Han-jin Lim ,  Yong-jae Lee ,  Se-hoon Oh ,  Hyun-jun Kim ,  Jin-sun Lee

IPC: C23C16/40 ,  H01L21/28 ,  H01L29/40 ,  C23C16/04 ,  C23C16/455 ,  C23C16/44 ,  H01L21/02 ,  H01L27/108 ,  H01L27/11582 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.