公开(公告)号：US10600643B2

公开(公告)日：2020-03-24

申请号：US15866568

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Hyun-jun Kim ,  Jin-sun Lee ,  Jae-soon Lim

IPC: H01L21/02 ,  C23C16/40 ,  H01L27/11582 ,  H01L27/108 ,  C23C16/455 ,  C23C16/06 ,  C23C16/02 ,  H01L21/28 ,  H01L27/1157

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

公开(公告)号：US10103026B2

公开(公告)日：2018-10-16

申请号：US15227089

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min Moon ,  Youn-soo Kim ,  Han-jin Lim ,  Yong-jae Lee ,  Se-hoon Oh ,  Hyun-jun Kim ,  Jin-sun Lee

IPC: H01L21/28 ,  H01L29/40 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

公开(公告)号：US10468256B2

公开(公告)日：2019-11-05

申请号：US15482005

申请日：2017-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min Moon ,  Youn-soo Kim ,  Han-jin Lim ,  Yong-jae Lee ,  Se-hoon Oh ,  Hyun-jun Kim ,  Jin-sun Lee

IPC: C23C16/40 ,  H01L21/28 ,  H01L29/40 ,  C23C16/04 ,  C23C16/455 ,  C23C16/44 ,  H01L21/02 ,  H01L27/108 ,  H01L27/11582 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.