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公开(公告)号：US12009387B2
公开(公告)日：2024-06-11
申请号：US17323433
申请日：2021-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-goo Kang , Hyun-suk Lee , Gi-hee Cho
CPC classification number: H01L28/75 , H01L28/60 , H01L28/87 , H01L28/88 , H01L28/90 , H10B12/0335 , H10B12/31
Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
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Patent Agency Ranking
公开(公告)号：US11031460B2
公开(公告)日：2021-06-08
申请号：US16555210
申请日：2019-08-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-goo Kang , Hyun-suk Lee , Gi-hee Cho
IPC: H01L49/02 , H01L27/108
Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
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公开(公告)号：US11588012B2
公开(公告)日：2023-02-21
申请号：US17200081
申请日：2021-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-goo Kang , Sang-yeol Kang , Youn-soo Kim , Jin-su Lee , Hyung-suk Jung , Kyu-ho Cho
IPC: H01L49/02 , H01L21/285 , C23C16/40 , C23C16/455 , C23C16/56 , H01L21/02 , H01L21/321 , H01L27/108
Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
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公开(公告)号：US11978765B2
公开(公告)日：2024-05-07
申请号：US17323433
申请日：2021-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-goo Kang , Hyun-suk Lee , Gi-hee Cho
CPC classification number: H01L28/75 , H01L28/60 , H01L28/87 , H01L28/88 , H01L28/90 , H10B12/0335 , H10B12/31
Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
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公开(公告)号：US10978552B2
公开(公告)日：2021-04-13
申请号：US16273603
申请日：2019-02-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-goo Kang , Sang-yeol Kang , Youn-soo Kim , Jin-su Lee , Hyung-suk Jung , Kyu-ho Cho
IPC: H01L49/02 , H01L21/285 , C23C16/40 , C23C16/455 , C23C16/56 , H01L21/02 , H01L21/321 , H01L27/108
Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
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公开(公告)号：US20200266265A1
公开(公告)日：2020-08-20
申请号：US16555210
申请日：2019-08-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun-goo Kang , Hyun-suk Lee , Gi-hee Cho
IPC: H01L49/02 , H01L27/108
Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
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