Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US16555210Application Date: 2019-08-29
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Publication No.: US11031460B2Publication Date: 2021-06-08
- Inventor: Jun-goo Kang , Hyun-suk Lee , Gi-hee Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0020057 20190220
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108

Abstract:
An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
Public/Granted literature
- US20200266265A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-08-20
Information query
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