公开(公告)号：US20190189767A1

公开(公告)日：2019-06-20

申请号：US16042114

申请日：2018-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yeol SONG ,  Wan-don Kim ,  Su-young Bae ,  Dong-soo Lee ,  Jong-han Lee ,  Hyung-suk Jung ,  Sang-jin Hyun

IPC: H01L29/49 ,  H01L29/423 ,  H01L29/51 ,  H01L21/8234

Abstract: A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.

公开(公告)号：US09564295B2

公开(公告)日：2017-02-07

申请号：US14827347

申请日：2015-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-soo Lee ,  Sung-ho Jang ,  Byeong-hee Kim ,  Doug-yong Sung ,  Dong-ok Shin

IPC: G01J3/30 ,  H01J37/32 ,  G01J1/44 ,  G01J1/42

CPC classification number: H01J37/32146 ,  G01J1/44 ,  G01J2001/4238 ,  G01J2001/4453 ,  H01J37/32091 ,  H01J37/32935 ,  H01J37/32972

Abstract: A diagnosis system for pulsed plasma includes an optical emission sensor (OES) to receive light generated the pulsed plasma, the pulsed plasma having been generated in accordance with a pulse signal, a digitizer to synchronize the electrical signal with the pulse signal, and an analyzer to analyze the synchronized electrical signal.

Abstract translation: 用于脉冲等离子体的诊断系统包括用于接收产生脉冲等离子体的光的光发射传感器（OES），根据脉冲信号产生的脉冲等离子体，使电信号与脉冲信号同步的数字化仪，和分析仪 分析同步电信号。

公开(公告)号：US10529817B2

公开(公告)日：2020-01-07

申请号：US16042114

申请日：2018-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yeol Song ,  Wan-don Kim ,  Su-young Bae ,  Dong-soo Lee ,  Jong-han Lee ,  Hyung-suk Jung ,  Sang-jin Hyun

IPC: H01L29/49 ,  H01L29/423 ,  H01L21/8234 ,  H01L29/51

Abstract: A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.

公开(公告)号：US10529699B2

公开(公告)日：2020-01-07

申请号：US15581879

申请日：2017-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-jun Bang ,  Seog-ho Lim ,  Chang-ho Shin ,  Dong-soo Lee ,  Sun Kim

IPC: H01L27/15 ,  H01L25/13 ,  F21V8/00 ,  H01L33/48 ,  H01L33/56 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60 ,  H01L33/38

Abstract: Provided are a light source module and a backlight unit (BLU) including the same. The light source module includes a substrate including a base plate extending in a first direction and a pair of dam structures stacked on opposing sides of the base plate along a second direction, orthogonal to the first direction, and extending along the base plate in the first direction, wherein the pair of dam structures are spaced apart from each other along a third direction, orthogonal to the first and second directions. A plurality of light-emitting devices are mounted on the substrate between the pair of dam structures and spaced apart from one another in the first direction. An encapsulation layer covers at least one side surface and a top surface of each of the plurality of light-emitting devices. A height of the pair of dam structures is greater than a height of the encapsulation layer.

公开(公告)号：US09099304B2

公开(公告)日：2015-08-04

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/318 ,  H01L21/02 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US20150028458A1

公开(公告)日：2015-01-29

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Rakib Uddin Mohammad ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US11568303B2

公开(公告)日：2023-01-31

申请号：US16153135

申请日：2018-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-hoon Kim ,  Young-hwan Park ,  Dong-soo Lee ,  Dae-hyun Kim ,  Han-su Cho ,  Hyun-jung Kim

IPC: G06N20/00

Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

公开(公告)号：US10509159B2

公开(公告)日：2019-12-17

申请号：US15407641

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Seog-ho Lim ,  Chang-ho Shin ,  Sun Kim ,  Myoung-sun Ha ,  Jae-jun Bang

IPC: H01L25/075 ,  F21V8/00 ,  F21V19/00 ,  F21V23/06 ,  H01L33/50 ,  H01L33/62 ,  F21Y115/10 ,  H01L33/48

Abstract: A light source module according to some example embodiments includes a first substrate and a plurality of second substrates. The first substrate includes a plurality of connectors configured to at least receive a supply of electrical power and a plurality of first connection pads that are configured to be electrically connected to the plurality of connectors. The second substrates each include a plurality of mounting elements on an upper surface and a plurality of second connection pads on a lower surface of the second substrate and configured to be electrically connected to the plurality of mounting elements. Each mounting element may be connected to a separate light-emitting device. A plurality of connection members may electrically connect the first connection pads of the first substrate to the plurality of second connection pads of the plurality of second substrates.

公开(公告)号：US09929239B2

公开(公告)日：2018-03-27

申请号：US15050867

申请日：2016-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L29/51 ,  H01L29/34 ,  H01L29/66 ,  H01L29/20 ,  H01L21/322 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

公开(公告)号：US20150061030A1

公开(公告)日：2015-03-05

申请号：US14471900

申请日：2014-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mohammad Rakib Uddin ,  Moon-seung Yang ,  Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Eui-chul Hwang

IPC: H01L29/04 ,  H01L27/092 ,  H01L29/16 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/04 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/76224 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/16 ,  H01L29/20

Abstract: Provided are semiconductor structures and methods of fabricating the same. The semiconductor structure includes a silicon substrate, at least one semiconductor layer that is grown on the silicon substrate and has a lattice constant in a range from about 1.03 to about 1.09 times greater than that of the silicon substrate, and a buffer layer that is disposed between the silicon substrate and the semiconductor layer and includes a metal silicide compound for lattice matching with the semiconductor layer. Related fabrication methods are also discussed.

Abstract translation: 提供半导体结构及其制造方法。 半导体结构包括硅衬底，至少一个在硅衬底上生长并具有比硅衬底大约1.03至大约1.09倍的晶格常数的半导体层，以及设置的缓冲层 在硅衬底和半导体层之间，并且包括用于与半导体层进行晶格匹配的金属硅化物化合物。 还讨论了相关的制造方法。