公开(公告)号：US09929239B2

公开(公告)日：2018-03-27

申请号：US15050867

申请日：2016-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L29/51 ,  H01L29/34 ,  H01L29/66 ,  H01L29/20 ,  H01L21/322 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

公开(公告)号：US09099304B2

公开(公告)日：2015-08-04

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/318 ,  H01L21/02 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US20150028458A1

公开(公告)日：2015-01-29

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Rakib Uddin Mohammad ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US09570359B2

公开(公告)日：2017-02-14

申请号：US14510354

申请日：2014-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-seung Yang ,  Mohammad Rakib Uddin ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Seong-ho Cho

IPC: H01L21/20 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/02

CPC classification number: H01L21/823807 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02645 ,  H01L27/092

Abstract: A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.

Abstract translation: 公开了一种衬底结构，包括衬底结构的互补金属氧化物半导体（CMOS）器件以及制造CMOS器件的方法，其中衬底结构包括：衬底，由材料形成的至少一个种子层 包括硼（B）和/或磷（P），以及种子层上的缓冲层。 该衬底结构使得可以减小缓冲层的厚度并且还改善由衬底结构形成的半导体器件的性能特性。