公开(公告)号：US09929239B2

公开(公告)日：2018-03-27

申请号：US15050867

申请日：2016-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L29/51 ,  H01L29/34 ,  H01L29/66 ,  H01L29/20 ,  H01L21/322 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

公开(公告)号：US09099304B2

公开(公告)日：2015-08-04

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/318 ,  H01L21/02 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US20150028458A1

公开(公告)日：2015-01-29

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Rakib Uddin Mohammad ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。