公开(公告)号：US09666706B2

公开(公告)日：2017-05-30

申请号：US15210368

申请日：2016-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

IPC: H01L21/336 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78 ,  H01L21/02 ,  H01L29/12 ,  H01L29/423 ,  H01L29/15 ,  H01L29/205

CPC classification number: H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

公开(公告)号：US09312377B2

公开(公告)日：2016-04-12

申请号：US14521910

申请日：2014-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-moon Lee ,  Young-jin Cho

IPC: H01L29/12 ,  H01L21/337 ,  H01L21/00 ,  H01L29/78 ,  H01L29/15 ,  H01L29/10 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/205 ,  H01L29/51

CPC classification number: H01L29/78 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/15 ,  H01L29/205 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7783

Abstract: Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.

Abstract translation: 提供了包括衬底（例如，硅衬底），设置在衬底的一部分上的多层结构以及设置在多层结构上的至少一个电极的半导体器件及其制造方法。 多层结构可以包括含有III-V族材料的有源层和设置在衬底和有源层之间的电流阻挡层。 半导体器件还可以包括设置在衬底和有源层之间的缓冲层。 在基板是p型的情况下，缓冲层可以是n型材料层，电流阻挡层可以是p型材料层。 电流阻挡层可以含有III-V族材料。 具有开口的掩模层可以设置在基板上，使得多层结构可以设置在由开口暴露的基板的部分上。

公开(公告)号：US09570359B2

公开(公告)日：2017-02-14

申请号：US14510354

申请日：2014-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-seung Yang ,  Mohammad Rakib Uddin ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Seong-ho Cho

IPC: H01L21/20 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/02

CPC classification number: H01L21/823807 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02645 ,  H01L27/092

Abstract: A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.

Abstract translation: 公开了一种衬底结构，包括衬底结构的互补金属氧化物半导体（CMOS）器件以及制造CMOS器件的方法，其中衬底结构包括：衬底，由材料形成的至少一个种子层 包括硼（B）和/或磷（P），以及种子层上的缓冲层。 该衬底结构使得可以减小缓冲层的厚度并且还改善由衬底结构形成的半导体器件的性能特性。

公开(公告)号：US10587869B2

公开(公告)日：2020-03-10

申请号：US15672492

申请日：2017-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-don Yoon ,  A-in Cho ,  Sang-chul Ko ,  Joung-ho Roh ,  Bong-seok Lee ,  Sang-moon Lee

IPC: H04N13/388 ,  H04N21/81 ,  H04N21/43 ,  H04N21/4728 ,  H04N21/41 ,  G06T15/10 ,  G06F3/14 ,  G09G3/00 ,  H04N13/189 ,  G06T15/04 ,  G06T15/20 ,  H04N21/80

Abstract: A method performed by a first image display apparatus includes: obtaining a 360-degree image; displaying, on a first display included in the first image display apparatus, a first image corresponding to a first area of the 360-degree image; controlling a second image display apparatus to display a second image corresponding to a second area of the 360-degree image, the second area being adjacent to the first area.

公开(公告)号：US09099304B2

公开(公告)日：2015-08-04

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/318 ,  H01L21/02 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US20150028458A1

公开(公告)日：2015-01-29

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Rakib Uddin Mohammad ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US10997236B2

公开(公告)日：2021-05-04

申请号：US15560779

申请日：2016-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-moon Lee ,  In-woo Hwang ,  Byeong-seob Ko ,  Ki-beom Kim ,  Young-tae Kim ,  Anant Baijal

IPC: G06F16/00 ,  G06F16/683 ,  G06F16/61 ,  G10L25/03 ,  G10L25/54 ,  G10L19/02 ,  G10L25/45

Abstract: An audio contents recognition method includes receiving an audio signal; obtaining audio fingerprints (AFPs) based on a spectral shape of the received audio signal; generating hash codes for the obtained audio fingerprints; transmitting a matching query between the generated hash codes and hash codes stored in a database; and receiving a contents recognition result of the audio signal in response to the transmitting, wherein the generating of the hash codes includes: determining a frame interval delta_F of an audio fingerprint to generate the hash codes among the obtained audio fingerprints.

公开(公告)号：US09929239B2

公开(公告)日：2018-03-27

申请号：US15050867

申请日：2016-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L29/51 ,  H01L29/34 ,  H01L29/66 ,  H01L29/20 ,  H01L21/322 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

公开(公告)号：US10939039B2

公开(公告)日：2021-03-02

申请号：US16317424

申请日：2017-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-moon Lee ,  Sang-chul Ko ,  Byeong-geun Cheon

IPC: H04N5/232 ,  H04N9/802

Abstract: A display apparatus including: a display; a loudspeaker; a user input unit; a video processor configured to process a video signal to be displayed as an image on the display, and change a viewpoint of the image displayed on the display in response to a user input made through the user input unit; and an audio processor configured to process an audio signal to be output as a sound from the loudspeaker, determine acoustic features of the audio signal, and adjust the output of the sound from the loudspeaker according to the acoustic features in response to the user input.

公开(公告)号：US09105496B2

公开(公告)日：2015-08-11

申请号：US13974233

申请日：2013-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-moon Lee ,  Young-jin Cho

IPC: H01L27/092 ,  H01L29/267 ,  H01L27/15 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L21/8258 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/30625 ,  H01L21/8238 ,  H01L27/0605 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/15 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267

Abstract: A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.

Abstract translation: 互补金属氧化物半导体（CMOS）器件包括在硅衬底上的n型第一晶体管，n型第一晶体管包括III-V族化合物半导体衬底和在硅衬底上的p型第二晶体管， p型第二晶体管，包括基于锗的衬底。