公开(公告)号：US09576797B2

公开(公告)日：2017-02-21

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477 ,  H01L27/32

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US09035311B2

公开(公告)日：2015-05-19

申请号：US13841121

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC: H01L29/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/52 ,  H01L27/3265 ,  H01L2227/323

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US20140353669A1

公开(公告)日：2014-12-04

申请号：US14061359

申请日：2013-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Il-Hun Seo ,  Jong-Hyun Choi ,  Byung-Soo So ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259

Abstract: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.

Abstract translation: 显示装置包括与衬底重叠并包括沟道区的有源层。 显示装置还包括设置在基板和有源层上的绝缘层。 显示装置还包括设置在绝缘层上的栅电极，与沟道区重叠，并且包括第一栅电极层和第二栅极电极层，其中第一栅极电极层由第一材料形成， 绝缘层和第二电极层，并且其中第二栅电极层由与第一材料不同的第二材料形成。 显示装置还包括设置在绝缘层上并包括由第一材料形成的第一接触层的接触部分。 显示装置还包括与第一接触层接触的像素电极。

公开(公告)号：US09406730B2

公开(公告)日：2016-08-02

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/10 ,  H01L27/12

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08987723B2

公开(公告)日：2015-03-24

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，所述第一绝缘层包括在所述第一半导体层和所述第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US20140299860A1

公开(公告)日：2014-10-09

申请号：US14307980

申请日：2014-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L27/32

CPC classification number: H01L27/3244 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

Abstract translation: 制造薄膜晶体管（TFT）的方法包括在基板上形成缓冲层，非晶硅层和绝缘层; 使非晶硅层结晶为多晶硅层; 通过同时构图多晶硅层和绝缘层来形成具有预定形状的半导体层和栅极绝缘层; 通过在栅极绝缘层上形成和图案化金属层，形成包括第一部分和第二部分的栅电极。 第一部分形成在栅极绝缘层上并且与半导体层的沟道区重叠，并且第二部分接触半导体层。 通过掺杂半导体层的区域，在半导体层上形成源极区和漏极区。 该区域排除与栅电极重叠的沟道区域，并构成不与栅电极重叠的区域。 在栅电极上形成层间绝缘层，以覆盖栅极绝缘层; 在层间绝缘层和栅极绝缘层上形成接触孔，露出源极区域和漏极区域，同时形成露出第二部分的开口部。 源电极和漏电极通过在层间绝缘层上图案化导电层而形成。 源电极和漏电极经由接触孔电连接到源极区域和漏极区域，同时去除经由开口露出的第二部分。

公开(公告)号：US10147774B2

公开(公告)日：2018-12-04

申请号：US14307980

申请日：2014-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

公开(公告)号：US09202856B2

公开(公告)日：2015-12-01

申请号：US14065085

申请日：2013-10-28

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Moon Kang ,  Jong-Hyun Choi ,  Byung-Soo So ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L27/3279 ,  H01L27/124 ,  H01L27/3248

Abstract: An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and including an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed.

Abstract translation: 公开了一种有机发光二极管显示装置。 该器件例如包括在衬底上具有有源层的薄膜晶体管，栅电极，源电极和漏电极，形成在与栅电极相同的层上的像素电极，电极图案部分曝光 所述像素电极形成在所述像素电极上，形成在所述电极图案和所述漏电极之间并与所述漏电极电连接的像素电极接触件，所述像素限定膜暴露所述像素电极并形成为覆盖所述漏电极和所述源电极 形成在曝光的像素电极上并包括发光层的中间层，以及与像素电极相对形成的至少部分覆盖中间层的相对电极。 还公开了一种制造该器件的方法。

公开(公告)号：US09171865B2

公开(公告)日：2015-10-27

申请号：US14061359

申请日：2013-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Il-Hun Seo ,  Jong-Hyun Choi ,  Byung-Soo So ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/14 ,  H01L31/036 ,  H01L21/00 ,  H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259

Abstract: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.

Abstract translation: 显示装置包括与衬底重叠并包括沟道区的有源层。 显示装置还包括设置在基板和有源层上的绝缘层。 显示装置还包括设置在绝缘层上的栅电极，与沟道区重叠，并且包括第一栅电极层和第二栅极电极层，其中第一栅极电极层由第一材料形成， 绝缘层和第二电极层，并且其中第二栅电极层由与第一材料不同的第二材料形成。 显示装置还包括设置在绝缘层上并包括由第一材料形成的第一接触层的接触部分。 显示装置还包括与第一接触层接触的像素电极。

公开(公告)号：US20140291625A1

公开(公告)日：2014-10-02

申请号：US13965179

申请日：2013-08-12

Applicant: Samsung Display Co., LTD.

Inventor： Jun-Seon Seo ,  Jong-Hyun Choi ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L51/055 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/32 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/78627 ,  H01L2227/323

Abstract: Provided is an organic light-emitting display apparatus including a substrate; and a plurality of pixels on the substrate, wherein each of the pixels comprise: an organic light-emitting device comprising a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode, wherein the intermediate layer comprises an organic emission layer; a driving transistor configured to drive the organic light-emitting device; and a switching transistor electrically coupled to the driving transistor, wherein the gate electrode of the driving transistor comprises a first conductive layer, and a second conductive layer between the first conductive layer and the active layer of the driving transistor and has a smaller size than the first conductive layer, and the gate electrode of the switching transistor comprises a same material as the first conductive layer.

Abstract translation: 提供一种包括基板的有机发光显示装置; 以及所述基板上的多个像素，其中每个所述像素包括：有机发光器件，其包括第一电极，第二电极和在所述第一电极和所述第二电极之间的中间层，其中所述中间层包括 有机发射层; 配置为驱动有机发光器件的驱动晶体管; 以及电耦合到所述驱动晶体管的开关晶体管，其中所述驱动晶体管的栅电极包括第一导电层，以及在所述第一导电层和所述驱动晶体管的有源层之间的第二导电层，并且具有比所述驱动晶体管更小的尺寸 第一导电层，并且开关晶体管的栅电极包括与第一导电层相同的材料。