公开(公告)号：US20150316941A1

公开(公告)日：2015-11-05

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. SILVEIRA ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: G05D23/19 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

公开(公告)号：US09799491B2

公开(公告)日：2017-10-24

申请号：US15146133

申请日：2016-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  James D. Carducci ,  Hamid Tavassoli ,  Olga Regelman ,  Ying Zhang

IPC: H01J37/32 ,  H01J37/06 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/06 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/334 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

公开(公告)号：US20140339980A1

公开(公告)日：2014-11-20

申请号：US14307945

申请日：2014-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Leonid Dorf ,  Shahid Rauf ,  Ying Zhang ,  Kenneth S. Collins ,  Hamid Tavassoli ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract translation: 在用于处理工件的等离子体反应器中，使用电子束作为等离子体源，并且将远程自由基源与处理室结合。

公开(公告)号：US10697057B2

公开(公告)日：2020-06-30

申请号：US15814684

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Goichi Yoshidome ,  Keith A. Miller ,  Hamid Tavassoli ,  Andrew Tomko

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/56 ,  C23C14/04

Abstract: Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

公开(公告)号：US10546728B2

公开(公告)日：2020-01-28

申请号：US15199046

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US11315760B2

公开(公告)日：2022-04-26

申请号：US16791947

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US10704147B2

公开(公告)日：2020-07-07

申请号：US15421964

申请日：2017-02-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. Rasheed ,  Muhannad Mustafa ,  Hamid Tavassoli ,  Steven V Sansoni ,  Cheng-Hsiung Tsai ,  Vikash Banthia

IPC: C23C16/00 ,  C23C16/46 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

公开(公告)号：US10537013B2

公开(公告)日：2020-01-14

申请号：US13863226

申请日：2013-04-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Fernando Silveira ,  Richard Fovell ,  Hamid Tavassoli

IPC: H05H1/00

Abstract: Embodiments of the invention include an apparatus, system, and method for cooling a pedestal for supporting a workpiece during plasma processing. An embodiment of a pedestal includes: a base over which the workpiece is to be disposed, a plurality of nozzles to supply a fluid from a supply plenum to impinge on a surface of the base, and a plurality of return conduits to return the supplied fluid to a return plenum. The fluid to be supplied by the plurality of nozzles can be projected as one or more jets submerged in surrounding fluid or as a spray that emerges from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge on the surface of the base.

公开(公告)号：US10386126B2

公开(公告)日：2019-08-20

申请号：US15050419

申请日：2016-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kallol Bera ,  Xiaoping Zhou ,  Douglas A. Buchberger, Jr. ,  Andrew Nguyen ,  Hamid Tavassoli ,  Surajit Kumar ,  Shahid Rauf

IPC: F28F3/12 ,  F28F13/00

Abstract: Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

公开(公告)号：US09214315B2

公开(公告)日：2015-12-15

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. Silveira ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: B23K10/00 ,  H01J37/20 ,  H05H1/34

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。