公开(公告)号：US12142458B2

公开(公告)日：2024-11-12

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/24 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US12020965B2

公开(公告)日：2024-06-25

申请号：US17076024

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Sathya Swaroop Ganta ,  Kallol Bera ,  Canfeng Lai

IPC: C23C16/00 ,  C23C16/513 ,  H01J37/32 ,  H01L21/00 ,  H01L21/02 ,  H01L21/677

CPC classification number: H01L21/67709 ,  C23C16/513 ,  H01J37/3266 ,  H01L21/02274

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing equipment, and more specifically to apparatus, e.g., magnet holding structures, that can be used with magnets during plasma processing of a substrate. In an embodiment, a magnet holding structure for a plasma-enhanced chemical vapor deposition chamber is provided. The magnet holding structure includes a top piece having a plurality of magnet retention members and a bottom piece having a plurality of magnet retention members. The top piece has a first inside edge and a first outside edge, and the bottom piece has a second inside edge and a second outside edge. The magnet holding structure further includes a plurality of casings. Each casing of the plurality of casings is configured to at least partially encapsulate a magnet, and each casing positioned between a magnet retention member of the top piece and a magnet retention member of the bottom piece.

公开(公告)号：US11810810B2

公开(公告)日：2023-11-07

申请号：US18079589

申请日：2022-12-12

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Kallol Bera ,  Joseph Yudovsky

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/68764 ,  H01L21/67017 ,  H01L21/6838 ,  H01L21/6875 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68771 ,  H01L21/68785

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

公开(公告)号：US20210166923A1

公开(公告)日：2021-06-03

申请号：US17150702

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  H01L21/67 ,  C23C16/34 ,  C23C16/509 ,  C23C16/40 ,  C23C16/458 ,  C23C16/44

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10903056B2

公开(公告)日：2021-01-26

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/50 ,  C23C16/455 ,  C23C16/509 ,  C23C16/458 ,  C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/40

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US10273578B2

公开(公告)日：2019-04-30

申请号：US14506317

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Robert T. Trujillo ,  Kevin Griffin ,  Garry K. Kwong ,  Kallol Bera ,  Li-Qun Xia ,  Mandyam Sriram

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.

公开(公告)号：US10012248B2

公开(公告)日：2018-07-03

申请号：US15228660

申请日：2016-08-04

Applicant: Applied Materials, Inc.

Inventor： Daniel J. Hoffman ,  Kallol Bera

IPC: C23C16/458 ,  H01J37/32 ,  F15D1/00 ,  C23C16/44 ,  H01L21/67 ,  C23C14/22 ,  H01L21/683

CPC classification number: F15D1/0005 ,  C23C14/22 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

Abstract: A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.

公开(公告)号：US20170352575A1

公开(公告)日：2017-12-07

申请号：US15616364

申请日：2017-06-07

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Kallol Bera ,  Joseph Yudovsky

IPC: H01L21/687 ,  H01L21/67

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

公开(公告)号：US20160376706A1

公开(公告)日：2016-12-29

申请号：US15192159

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Aaron Miller ,  Kallol Bera

IPC: C23C16/455

CPC classification number: C23C16/45578 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/3244

Abstract: Apparatus and methods for processing a substrate including an injector unit insert with a plurality of flow paths leading to a first plenum, each of the flow paths providing one or more of substantially the same residence time, length and/or conductance. Injector units including the injector unit inserts have increased flow uniformity.

Abstract translation: 用于处理衬底的设备和方法，其包括具有通向第一增压室的多个流动路径的喷射器单元插入件，每个流动路径提供基本上相同的停留时间，长度和/或电导的一个或多个。 包括注射器单元插入件的进样器单元具有增加的流动均匀性。

公开(公告)号：US09336997B2

公开(公告)日：2016-05-10

申请号：US14215563

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32128 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/32577 ,  H01J2237/3321

Abstract: A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

Abstract translation: 描述了一种与处理室一起使用的等离子体源组件。 组件包括到单个或多个RF热电极的多馈RF功率连接。