公开(公告)号：US20150316941A1

公开(公告)日：2015-11-05

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. SILVEIRA ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: G05D23/19 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

公开(公告)号：US20160155612A1

公开(公告)日：2016-06-02

申请号：US15013795

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC: H01J37/32 ,  G05B6/02

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

公开(公告)号：US20180061679A1

公开(公告)日：2018-03-01

申请号：US15683967

申请日：2017-08-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Fernando M. SILVEIRA ,  Chunlei ZHANG ,  David ULLSTROM ,  Michael R. RICE

IPC: H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for a multi-chamber processing system having shared vacuum systems are disclosed herein. In some embodiments, a multi-chamber processing system for processing substrates includes a first process chamber; a second process chamber; a first vacuum system coupled to the first and second process chambers through first and second valves and to a first shared vacuum pump; and a second vacuum system coupled to the first and second process chambers through third and fourth valves and to a second shared vacuum pump, wherein the second vacuum system is fluidly independent from the first vacuum system.