公开(公告)号：US08962488B2

公开(公告)日：2015-02-24

申请号：US13849729

申请日：2013-03-25

Applicant: Applied Materials, Inc.

Inventor： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

IPC: H01L21/302 ,  C23F1/00 ,  H01J37/32 ,  H01L21/311

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

公开(公告)号：US20150316941A1

公开(公告)日：2015-11-05

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. SILVEIRA ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: G05D23/19 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

公开(公告)号：US09639097B2

公开(公告)日：2017-05-02

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

IPC: G06F19/00 ,  G05D23/19 ,  H01J37/32 ,  H01L21/67 ,  G05B15/02

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

公开(公告)号：US09214315B2

公开(公告)日：2015-12-15

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. Silveira ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: B23K10/00 ,  H01J37/20 ,  H05H1/34

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。