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公开(公告)号：US12104243B2
公开(公告)日：2024-10-01
申请号：US17348849
申请日：2021-06-16
发明人： Annamalai Lakshmanan , Jacqueline S. Wrench , Feihu Wang , Yixiong Yang , Joung Joo Lee , Srinivas Gandikota , Sang-heum Kim , Zhebo Chen , Gang Shen
IPC分类号： C23C14/02 , C23C14/06 , C23C14/16 , C23C14/58 , C23C16/02 , C23C16/06 , C23C16/42 , C23C16/455 , C23C16/52 , C23C16/56
CPC分类号： C23C16/0281 , C23C14/021 , C23C14/025 , C23C14/0682 , C23C14/16 , C23C14/5886 , C23C16/0227 , C23C16/06 , C23C16/42 , C23C16/45527 , C23C16/52 , C23C16/56
摘要： Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.
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公开(公告)号：US20240274437A1
公开(公告)日：2024-08-15
申请号：US18644475
申请日：2024-04-24
申请人： ASM IP Holding B.V.
发明人： Amir Kajbafvala , Joe Margetis , Xin Sun , David Kohen , Dieter Pierreux
IPC分类号： H01L21/02 , C23C16/08 , C23C16/24 , C23C16/42 , C23C16/455 , C23C16/52 , C30B25/16 , C30B25/18 , C30B29/06 , C30B29/52 , H01L29/06 , H01L29/423 , H01L29/786
CPC分类号： H01L21/0262 , C23C16/08 , C23C16/24 , C23C16/42 , C23C16/45523 , C23C16/52 , C30B25/165 , C30B25/18 , C30B29/06 , C30B29/52 , H01L21/02507 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.
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公开(公告)号：US20240200188A1
公开(公告)日：2024-06-20
申请号：US18590141
申请日：2024-02-28
发明人： Feng Q. Liu , Hua Chung , Schubert Chu , Mei Chang , Jeffrey W. Anthis , David Thompson
IPC分类号： C23C16/42 , C23C16/14 , C23C16/455 , C23C16/507 , C23C16/513 , C23C16/52
CPC分类号： C23C16/42 , C23C16/14 , C23C16/45536 , C23C16/45542 , C23C16/507 , C23C16/513 , C23C16/52
摘要： Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.
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公开(公告)号：US11942365B2
公开(公告)日：2024-03-26
申请号：US15994848
申请日：2018-05-31
申请人： EUGENUS, INC.
IPC分类号： C23C16/42 , C23C16/34 , C23C16/455 , C23C28/00 , H01L21/02 , H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： H01L21/7685 , C23C16/34 , C23C16/345 , C23C16/42 , C23C16/45527 , C23C16/45529 , C23C28/00 , C23C28/321 , C23C28/34 , C23C28/345 , C23C28/36 , H01L21/02068 , H01L21/28518 , H01L21/28562 , H01L21/76841 , H01L23/53266 , H01L21/76846
摘要： The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.
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公开(公告)号：US11887855B2
公开(公告)日：2024-01-30
申请号：US17223506
申请日：2021-04-06
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285 , H01L21/768 , C23C16/14 , C23C16/455 , H01L21/28 , C23C16/06 , H01L21/3205 , C23C16/02 , C23C16/34 , C23C16/42
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/4557 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
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公开(公告)号：US11688856B2
公开(公告)日：2023-06-27
申请号：US17045026
申请日：2019-04-04
发明人： Won II Park , Won Jun Chang
IPC分类号： H01M4/62 , H01M4/04 , H01M4/136 , H01M10/0525 , C23C16/42 , H01M4/1397 , H01M4/02
CPC分类号： H01M4/628 , C23C16/42 , H01M4/0428 , H01M4/136 , H01M4/1397 , H01M10/0525 , H01M2004/028
摘要： The present invention relates to an electrode structure for a secondary battery comprising a potential sheath capable of suppressing a side reaction between an electrode and an electrolyte through electric potential control, and a method for manufacturing the same. The electrode structure for the secondary battery according to the present invention uses the electric potential control so that an unstable SEI layer, which causes decrease in cycle characteristic and capacity of an anode material, occurs only on the surface of a potential sheath without occurring on the surface of the anode active material, thereby being capable of completely solving the problems of the existing nanostructured electrode.
The electrode structure of the present invention exhibits very excellent cycle performance that is difficult to predict from the conventional nanowire electrode structure by virtue of a synergistic effect of the potential sheath and the nanowire anode active material, and has an effect that is stable upon charging and discharging with high rate and can exert stable performance even if small cracks occur on the potential sheath.-
公开(公告)号：US20230129073A1
公开(公告)日：2023-04-27
申请号：US18085006
申请日：2022-12-20
摘要： Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
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公开(公告)号：US20230124143A1
公开(公告)日：2023-04-20
申请号：US17964554
申请日：2022-10-12
发明人： Tomoya HASEGAWA , Masaki KUROKAWA , Masami OIKAWA
摘要： A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.
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公开(公告)号：US20220403505A1
公开(公告)日：2022-12-22
申请号：US17348849
申请日：2021-06-16
发明人： Annamalai LAKSHMANAN , Jacqueline S. WRENCH , Feihu WANG , Yixiong YANG , Joung Joo LEE , Srinivas GANDIKOTA , Sang-heum KIM , Zhebo CHEN , Gang SHEN
IPC分类号： C23C16/02 , C23C16/06 , C23C16/52 , C23C14/16 , C23C16/455 , C23C16/42 , C23C14/06 , C23C16/56 , C23C14/02 , C23C14/58
摘要： Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.
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公开(公告)号：US11530477B2
公开(公告)日：2022-12-20
申请号：US17146890
申请日：2021-01-12
摘要： Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
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