公开(公告)号：US20220403505A1

公开(公告)日：2022-12-22

申请号：US17348849

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Annamalai LAKSHMANAN ,  Jacqueline S. WRENCH ,  Feihu WANG ,  Yixiong YANG ,  Joung Joo LEE ,  Srinivas GANDIKOTA ,  Sang-heum KIM ,  Zhebo CHEN ,  Gang SHEN

IPC: C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  C23C14/16 ,  C23C16/455 ,  C23C16/42 ,  C23C14/06 ,  C23C16/56 ,  C23C14/02 ,  C23C14/58

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.