Abstract:
An optical nanodisplacement producing apparatus is realized by employing an optical parametric oscillator of which cavity length is varied in correspondence with a wavelength or the intensity of the output light signal to achieve a fine-displacement producing mechanism. An optical nanodisplacement producing apparatus having high resolution less than 0.1 nm and a highly stable characteristic is realized as a very fine pattern forming/monitoring apparatus.
Abstract:
A memory device includes a memory node (1) to which charge is written through a tunnel barrier configuration (2) from a control electrode (9). The stored charge effects the conductivity of a source/drain path (4) and data is read by monitoring the conductivity of the path. The charge barrier configuration comprises a multiple tunnel barrier configuration, which may comprise alternating layers (16) of polysilicon of 3 nm thickness and layers (15) of Si.sub.3 N.sub.4 of 1 nm thickness, overlying polycrystalline layer of silicon (1) which forms the memory node. Alternative barrier configurations (2) are described, including a Schottky barrier configuration, and conductive nanometre scale conductive islands (30, 36, 44), which act as the memory node, distributed in an electrically insulating matrix.
Abstract translation:存储器件包括从控制电极(9)通过隧道势垒配置(2)写入电荷的存储器节点(1)。 存储的电荷影响源/漏路径(4)的电导率,并且通过监测路径的电导率来读取数据。 电荷势垒配置包括多隧道势垒结构,其可以包括3nm厚度的多晶硅的交替层(16)和1nm厚度的Si 3 N 4层(15),覆盖形成存储器节点的硅的多晶层(1) 。 描述了包括肖特基势垒结构的替代屏障配置(2)和用作存储节点的导电纳米级导电岛(30,36,44),其分布在电绝缘矩阵中。
Abstract:
A memory device includes a memory node (1) to which charge is written through a tunnel barrier configuration (2) from a control electrode (9). The stored charge effects the conductivity of a source/drain path (4) and data is read by monitoring the conductivity of the path. The charge barrier configuration comprises a multiple tunnel barrier configuration, which may comprise alternating layers (16) of polysilicon of 3 nm thickness and layers (15) of Si3N4 of 1 nm thickness, overlying polycrystalline layer of silicon (1) which forms the memory node. Alternative barrier configurations (2) are described, including a Schottky barrier configuration, and conductive nanometer scale conductive islands (30, 36, 44), which act as the memory node, distributed in an electrically insulating matrix.
Abstract translation:存储器件包括从控制电极(9)通过隧道势垒配置(2)写入电荷的存储器节点(1)。 存储的电荷影响源/漏路径(4)的电导率,并且通过监测路径的电导率来读取数据。 电荷势垒配置包括多隧道势垒结构,其可以包括3nm厚度的多晶硅的交替层(16)和1nm厚度的Si 3 N 4层(15),覆盖形成存储器节点的硅的多晶层(1) 。 描述了包括肖特基势垒结构的替代屏障配置(2)和用作存储节点的导电纳米级导电岛(30,36,44),其分布在电绝缘矩阵中。
Abstract:
An accelerator pedal reaction force control device for controlling a depression reaction force of an accelerator pedal provided to a motor vehicle, the control device including: a reaction force actuator that provides the accelerator pedal with a depression reaction force; a target reaction force setting unit that sets a target depression reaction force; and a vehicle speed maintenance depression amount setting unit that sets an amount of depression of the accelerator pedal for maintaining a current vehicle speed as a vehicle speed maintenance depression amount, wherein, when a pedal depression amount exceeds the vehicle speed maintenance depression amount, the target reaction force setting unit performs a cruise assist whereby the target depression reaction force is set to a value of a cruise assist depression reaction force.
Abstract:
A vehicle floor structure with a floor body provided to a body frame is provided. The floor body is a hollow panel integrally formed by arranging a plurality of core materials with spaces on a flat plate and placing another flat plate over the core materials. In order to increase the rigidity of the entire floor body, core materials in edge portions of the floor body are joined to the body frame.
Abstract:
Disclosed is an evaporative fuel purging apparatus used for an internal combustion engine. A canister having an absorbing agent for absorbing an evaporative fuel generated in a fuel tank of the internal combustion engine is provided. A drain control valve is provided on a drain port for opening the canister to the atmospheric air, and which is adapted to open and close the drain port. A purge control valve is provided on a purge passage communicating the canister to a part of an intake system, and which is adapted to purge the evaporative fuel absorbed into the canister through opening and closing the purge passage. A diagnostic device diagnoses the presence or absence of leakage in a purge system which is sealed up by closing the drain control valve and the purge control valve after pressure-reduction treatment. In the above apparatus, the drain control valve is opened after termination of the diagnosis by the diagnostic device, to open the canister to the atmospheric air through the drain port, and after an elapse of a specified time, the purge is started by opening the purge control valve. With this construction, it is possible to prevent the rapid change in the air-fuel ratio in re-starting the purge after termination of the diagnosis for the purge system, and hence to improve the stabilization of the emission and the drivability.
Abstract:
.Iadd.Electrophotographic copying device including novel means for forming a high contrast electrostatic image on a photosensitive member, as well as means for developing said high contrast electrostatic image with toner particles, means for transferring the visualized electrostatic image to copying material and novel cleaning means for removing from the photosensitive member, residual toner particles after transfer of the image. .Iaddend.
Abstract:
An accelerator pedal reaction force control device for controlling a depression reaction force of an accelerator pedal provided to a motor vehicle, the control device including: a reaction force actuator that provides the accelerator pedal with a depression reaction force; a target reaction force setting unit that sets a target depression reaction force; and a vehicle speed maintenance depression amount setting unit that sets an amount of depression of the accelerator pedal for maintaining a current vehicle speed as a vehicle speed maintenance depression amount, wherein, when a pedal depression amount exceeds the vehicle speed maintenance depression amount, the target reaction force setting unit performs a cruize assist whereby the target depression reaction force is set to a value of a cruize assist depression reaction force.
Abstract:
Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).
Abstract:
Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).