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    Method of forming pattern
    3.
    发明授权
    Method of forming pattern 有权
    形成图案的方法

    公开(公告)号：US09459535B2

    公开(公告)日：2016-10-04

    申请号：US13759669

    申请日：2013-02-05

    申请人： Tokyo Ohka Kogyo Co., Ltd. ,  Tokyo Electron Limited

    发明人： Naoto Motoike ,  Katsumi Ohmori ,  Toshiaki Hato ,  Hidetami Yaegashi ,  Kenichi Oyama

    IPC分类号： G03F7/26 ,  G03F7/20 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/2026 ,  G03F7/0045 ,  G03F7/405

    摘要： A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. The resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

    摘要翻译： 一种形成图案的方法，包括将抗蚀剂组合物施加到基底以形成抗蚀剂膜，然后对抗蚀剂膜进行曝光和显影，从而形成含有抗蚀剂膜的第一图案; 在所述第一图案和所述基板的表面上形成SiO 2膜; 对SiO 2进行蚀刻，使得SiO 2膜仅保留在第一图案的侧壁部分上; 并且去除第一图案，从而形成包含SiO 2膜的第二图案。 抗蚀剂组合物含有在酸的作用下在显影液中显示出改变的溶解性的基质成分和暴露时产生酸的酸产生剂组分，所述基质成分含有含有具有酸分解性基团的结构单元的树脂成分， 通过酸的作用增加了极性，没有多环基团。

    SULFONIUM SALT AND PHOTO-ACID GENERATOR
    5.
    发明申请
    SULFONIUM SALT AND PHOTO-ACID GENERATOR 有权
    硫酸钠和光酸发生器

    公开(公告)号：US20140357896A1

    公开(公告)日：2014-12-04

    申请号：US14289686

    申请日：2014-05-29

    申请人： SAN-APRO LTD. ,  TOKYO OHKA KOGYO CO., LTD.

    发明人： Issei Suzuki ,  Takuya Ikeda ,  Yusaku Takashima ,  Takeshi Furuta ,  Yoshitaka Komuro ,  Yoshiyuki Utsumi ,  Takaaki Kaiho ,  Toshiaki Hato

    IPC分类号： C07C323/09 ,  C07C311/09 ,  C07C301/02 ,  C07C301/00

    CPC分类号： C07C309/06 ,  C07C309/19 ,  C07C311/48 ,  C07C317/04 ,  C07C381/12 ,  C07C2602/42

    摘要： Provided is a novel sulfonium salt that has high solubility in a solvent and has high light sensitivity to, especially, light having a wavelength not longer than deep-UV (254 nm) and a novel photo-acid generator comprising the sulfonium salt. The invention relates to a sulfonium salt represented by the following general formula (1) and a novel photo-acid generator comprising the sulfonium salt. wherein R1 represents an electron withdrawing group; R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, an alkoxy group, an acyl group, a halogenated alkyl group, a halogen atom, a hydroxyl group, a cyano group, or a nitro group; p and q each independently represent an integer of 0 to 5; and X− represents a monovalent counter anion.

    摘要翻译： 提供了一种在溶剂中具有高溶解度并对具有高于深UV（254nm）的波长的光，特别是具有不长于深UV（254nm）的光的光的高灵敏度的新型锍盐和包含锍盐的新型光酸产生剂。 本发明涉及由以下通式（1）表示的锍盐和包含锍盐的新型光酸产生剂。 其中R1表示吸电子基团; R2和R3各自独立地表示碳原子数1〜5的烷基，烷氧基，酰基，卤代烷基，卤素原子，羟基，氰基或硝基。 p和q各自独立地表示0〜5的整数， X-表示一价抗衡阴离子。

    Resist composition and method of forming resist pattern
    6.
    发明授权
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号：US09188863B2

    公开(公告)日：2015-11-17

    申请号：US13920481

    申请日：2013-06-18

    申请人： Tokyo Ohka Kogyo Co., Ltd.

    发明人： Yoshiyuki Utsumi ,  Toshiaki Hato

    IPC分类号： G03F7/004 ,  G03F7/38 ,  G03F7/40 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/38 ,  G03F7/40

    摘要： A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and which includes a base component which exhibits changed solubility in a developing solution by the action of acid, and a nitrogen-containing compound which has a boiling point of 50 to 200° C., a conjugate acid thereof having a pKa of 0 to 7, and a photodecomposable base; and a method of forming a resist pattern using the resist composition.

    摘要翻译： 一种抗蚀剂组合物，其在曝光时产生酸，并且通过酸的作用在显影液中显示出改变的溶解性，并且其包含通过酸作用在显影液中显示出改变的溶解度的碱成分和含有这样的含氮化合物， 沸点为50〜200℃，pKa为0〜7的共轭酸和光可分解碱; 以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。

    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    8.
    发明申请
    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    耐蚀组合物和形成耐力图案的方法

    公开(公告)号：US20130224658A1

    公开(公告)日：2013-08-29

    申请号：US13772658

    申请日：2013-02-21

    申请人： TOKYO OHKA KOGYO CO., LTD.

    发明人： Yoshitaka Komuro ,  Toshiaki Hato

    IPC分类号： G03F7/004

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/0397

    摘要： A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R1 represents a divalent linking group; R2 represents an arylene group which may have a substituent, and each of R3 and R4 independently represents an aryl group which may have a substituent; R3 and R4 may be mutually bonded with the sulfur atom to form a ring; R5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

    摘要翻译： 一种抗蚀剂组合物，其包含：通过酸作用显现在显影液中溶解度的碱成分（A） 光反应猝灭剂（C）; 以及曝光时产生酸的酸发生剂成分（B），其中，所述光反应性猝灭剂（C）含有下述通式（C1）表示的化合物（C）。 在该式中，X表示可以具有取代基的3〜30个碳原子的环状基团; R1表示二价连接基团; R2表示可以具有取代基的亚芳基，R3和R4各自独立地表示可以具有取代基的芳基; R3和R4可以与硫原子相互键合形成环; R5表示羟基，卤素原子，1〜5个碳原子的烷基，烷氧基或氟化烷基; p表示0〜2的整数， q表示0〜3的整数。

    METHOD OF FORMING PATTERN
    9.
    发明申请
    METHOD OF FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号：US20130209941A1

    公开(公告)日：2013-08-15

    申请号：US13759669

    申请日：2013-02-05

    申请人： TOKYO OHKA KOGYO CO., LTD ,  TOKYO ELECTRON LIMITED

    发明人： Naoto Motoike ,  Katsumi Ohmori ,  Toshiaki Hato ,  Hidetami Yaegashi ,  Kenichi Oyama

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2026 ,  G03F7/0045 ,  G03F7/405

    摘要： A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. Thr resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

    摘要翻译： 一种形成图案的方法，包括将抗蚀剂组合物施加到基底以形成抗蚀剂膜，然后对抗蚀剂膜进行曝光和显影，从而形成含有抗蚀剂膜的第一图案; 在所述第一图案和所述基板的表面上形成SiO 2膜; 对SiO 2进行蚀刻，使得SiO 2膜仅保留在第一图案的侧壁部分上; 并且去除第一图案，从而形成包含SiO 2膜的第二图案。 Thr抗蚀剂组合物含有在酸的作用下在显影液中显示出改变的溶解性的基础成分和暴露时产生酸的酸发生剂成分，所述基体成分含有含有具有酸分解性基团的结构单元的树脂成分， 通过酸的作用增加了极性，没有多环基团。