知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.028 秒)

    STORAGE DEVICE
    3.
    发明申请
    STORAGE DEVICE 有权

    公开(公告)号：US20220067166A1

    公开(公告)日：2022-03-03

    申请号：US17237532

    申请日：2021-04-22

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jin Taek KWON ,  Ye Jin YOON ,  Seung-Jae LEE ,  Ji Soo KIM

    IPC分类号： G06F21/57 ,  G06F21/64 ,  G06F21/79

    摘要： A storage device is provided. The storage device includes a boot ROM stores a plurality of public keys and a boot ROM image, an OTP memory identifies a first public key among the plurality of public keys, a first memory including a first area the stores the plurality of public keys and a flash boot image different from the boot ROM image, and a second area that stores a first boot signature corresponding to the flash boot image, a second memory including a first firmware image including a first firmware signature, and a memory controller that receives a second firmware image including a second firmware signature and a second boot signature, receives a second public key among the plurality of public keys and the flash boot image based on the second firmware image being received, and write the second boot signature in the second area of the first memory.

    ELECTRONIC DEVICE AND OPERATION CONTROL METHOD OF ELECTRONIC DEVICE
    4.
    发明申请
    ELECTRONIC DEVICE AND OPERATION CONTROL METHOD OF ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20190156746A1

    公开(公告)日：2019-05-23

    申请号：US16320568

    申请日：2017-07-26

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jung-Hyun KIM ,  Seung-Jae LEE ,  Young-Do KIM

    IPC分类号： G09G3/3233 ,  G09G3/20

    摘要： Various embodiments of the present invention relate to an electronic device and an operation control method of the electronic device, and the electronic device comprises an organic light-emitting diode (OLED) display panel including a plurality of sub pixels, a memory, and a processor, wherein the processor can be configured so as to confirm accumulated image data for each sub pixel of the display panel while a plurality of frames are displayed on the panel, generate a compensation image for compensating for a residual image generated on the display panel on the basis of the accumulated image data of each sub pixel when an event for residual image compensation occurs, and display the generated compensation image on the display panel.

    METHODS FOR FABRICATING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHODS FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20170040436A1

    公开(公告)日：2017-02-09

    申请号：US15191555

    申请日：2016-06-24

    申请人： Samsung Electronics Co., Ltd.

    发明人： Seung-Jae LEE ,  Ja-Eung KOO ,  Ho-Young KIM ,  Yeong-Bong PARK ,  Il-Su PARK ,  Bo-Un YOON ,  Il-Young YOON ,  Youn-Su HA

    IPC分类号： H01L29/66 ,  H01L21/321 ,  H01L29/417 ,  H01L21/28

    CPC分类号： H01L29/66545 ,  H01L21/31051 ,  H01L21/3212 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/82385 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517

    摘要： A method for fabricating a semiconductor device may comprise forming a first transistor having a first threshold voltage in a first region of a substrate, forming a second transistor having a second threshold voltage less than the first threshold voltage in a second region of the substrate, forming a third interlayer insulating film in the third region, and planarizing the first transistor, the second transistor and the third interlayer insulating film. The first transistor may include a first gate electrode having a first height and a first interlayer insulating film having the first height, and the second transistor may include a second gate electrode having a second height shorter than the first height and a second interlayer insulating film having the second height. The third interlayer insulating film may have the first height.

    摘要翻译： 一种用于制造半导体器件的方法可以包括在衬底的第一区域中形成具有第一阈值电压的第一晶体管，在衬底的第二区域中形成具有小于第一阈值电压的第二阈值电压的第二晶体管，形成 在第三区域中的第三层间绝缘膜，并且平坦化第一晶体管，第二晶体管和第三层间绝缘膜。 第一晶体管可以包括具有第一高度的第一栅极电极和具有第一高度的第一层间绝缘膜，并且第二晶体管可以包括具有比第一高度短的第二高度的第二栅极电极和第二层间绝缘膜， 第二高度。 第三层间绝缘膜可以具有第一高度。

    STORAGE DEVICE AND A STORAGE SYSTEM INCLUDING THE SAME
    8.
    发明申请
    STORAGE DEVICE AND A STORAGE SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20210191883A1

    公开(公告)日：2021-06-24

    申请号：US16996304

    申请日：2020-08-18

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Min Gon SHIN ,  Ji Soo KIM ,  Seung-Jae LEE ,  Ye Jin YOON ,  Hwa Soo LEE

    IPC分类号： G06F12/14 ,  G06F21/31 ,  G06F21/79 ,  G06F13/16 ,  G06F13/12 ,  G06F13/42

    摘要： A storage device including: a bridge board to receive a first command; an authenticator to receive user information; and a memory device to receive the first command from the bridge board, the memory device includes a memory controller which determines a status of the memory device, provides status information including the determined status of the memory device to the bridge board, determines the status of the memory device as an unlocked status or a locked status, the bridge board includes a transceiver which communicates with the host through an interface, a register which stores interface information, and a bridge board controller which generates a first response to the first command in a format corresponding to the interface using the interface information, and provides the first response to a host, the first response includes a status bit which inhibits or allows a write operation with respect to the memory device.

    METHODS OF FORMING GATES OF SEMICONDUCTOR DEVICES
    9.
    发明申请
    METHODS OF FORMING GATES OF SEMICONDUCTOR DEVICES 有权
    形成半导体器件栅的方法

    公开(公告)号：US20140235047A1

    公开(公告)日：2014-08-21

    申请号：US14264622

    申请日：2014-04-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： JONG-WON LEE ,  Bo-Un YOON ,  Seung-Jae LEE

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28008 ,  H01L21/28105 ,  H01L21/823842 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/513 ,  H01L29/66545

    摘要： Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.

    摘要翻译： 提供了形成半导体器件的栅极的方法。 所述方法可以包括在具有第一导电类型的第一衬底区域中形成第一凹槽，并在具有第二导电类型的第二衬底区域中形成第二凹部。 所述方法还可以包括在第一和第二凹部中形成高k层。 所述方法还可以包括在第一和第二衬底区域中的高k层上提供第一金属，第一金属设置在第二凹槽内。 所述方法还可以包括从第二凹部移除第一金属的至少一部分，同时保护第一凹槽内的材料不被去除。 所述方法还可以包括在从第二凹部去除第一金属的至少一部分之后，在第二凹部内提供第二金属。

    STORAGE DEVICE HAVING ENCRYPTION
    10.
    发明申请
    STORAGE DEVICE HAVING ENCRYPTION 有权

    公开(公告)号：US20220283714A1

    公开(公告)日：2022-09-08

    申请号：US17514059

    申请日：2021-10-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Myeong Jong LEE ,  Hyun Sook HONG ,  Ji Soo KIM ,  Seung-Jae LEE

    IPC分类号： G06F3/06

    摘要： A storage device includes a non-volatile memory configured to store an encryption key and a data key encrypted with the encryption key, writes data using the data key, and reads the data using the data key; and a storage controller, wherein the storage controller is configured to receive a first security setting command which allows access to the data key, using a first password, generates a first key on the basis of the first password in response to the first security setting command, encrypts the encryption key with the first key to generate a first encrypted encryption key, encrypts the first key with the encryption key to generate an encrypted first key, and stores the first encrypted encryption key and the encrypted first key in the non-volatile memory.