公开(公告)号：US11087996B2

公开(公告)日：2021-08-10

申请号：US16371461

申请日：2019-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Shin ,  Seok-Hoon Kim ,  Young-Hoo Kim ,  In-Gi Kim ,  Tae-Hong Kim ,  Sung-Hyun Park ,  Jin-Woo Lee ,  Ji-Hoon Cha ,  Yong-Jun Choi

IPC: H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  G02B27/09 ,  B23K26/352 ,  B08B7/00 ,  H01L29/66 ,  H01L27/11556 ,  H01L27/11582

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

公开(公告)号：US09275995B2

公开(公告)日：2016-03-01

申请号：US14543140

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum Kim ,  Bon-Young Koo ,  Seok-Hoon Kim ,  Chul Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Su-Jin Jung

IPC: H01L27/088 ,  H01L29/161 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/785

Abstract: An integrated circuit device includes an electrically conductive pattern on a substrate. This electrically conductive pattern may be a gate pattern of a field effect transistor. A first electrically insulating spacer is provided on a sidewall of the electrically conductive pattern. The first electrically insulating spacer includes a first lower spacer and a first upper spacer, which extends on the first lower spacer and has a side surface vertically aligned with a corresponding side surface of the first lower spacer. The first upper spacer has a greater dielectric constant relative to a dielectric constant of the first lower spacer. A pair of parallel channel regions may also be provided, which protrude from a surface of the substrate. The electrically conductive pattern may surround top and side surfaces of the pair of parallel channel regions.

Abstract translation: 集成电路器件包括在衬底上的导电图案。 该导电图案可以是场效应晶体管的栅极图案。 第一电绝缘垫片设置在导电图案的侧壁上。 第一电绝缘间隔件包括第一下间隔件和第一上间隔件，其在第一下间隔件上延伸并且具有与第一下间隔件的对应侧表面垂直对准的侧表面。 第一上间隔物相对于第一下间隔物的介电常数具有更大的介电常数。 还可以设置一对平行的通道区域，其从衬底的表面突出。 导电图案可以围绕该对平行通道区域的顶表面和侧表面。

公开(公告)号：US20140024192A1

公开(公告)日：2014-01-23

申请号：US13932047

申请日：2013-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Dong-Chan Suh ,  Byeong-Chan Lee

IPC: H01L29/66

CPC classification number: H01L29/6656 ,  H01L21/764 ,  H01L21/7682 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.

Abstract translation: 一种半导体器件的制造方法，其特征在于，在基板上形成伪栅极图案和间隔物，该间隔物配置在伪栅极图案的侧壁上，通过去除间隔物，在伪栅极图案的两面形成气隙， 通过去除伪栅极图案，并且在暴露的基板上顺序地形成包括高k绝缘膜和金属栅电极的栅极绝缘膜。

公开(公告)号：US10147723B2

公开(公告)日：2018-12-04

申请号：US15653733

申请日：2017-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

公开(公告)号：US09916251B2

公开(公告)日：2018-03-13

申请号：US14955070

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyong Jung ,  Seok-Hoon Kim ,  Euicheol Lim ,  Jinseok Ha

IPC: G06F12/08 ,  G06F12/0875 ,  G09G3/00 ,  G06T1/60

CPC classification number: G06F12/0875 ,  G06F2212/1016 ,  G06F2212/401 ,  G06F2212/455 ,  G06F2212/60 ,  G06T1/60 ,  G09G3/00 ,  G09G5/395 ,  G09G2340/02 ,  G09G2360/121 ,  G09G2370/10

Abstract: A cache managing method of a display driving apparatus may be provided. The display driving apparatus including an encoder to generate compressed data by compressing raw data, a memory to store the compressed data, and a decoder to restore the compressed data and including a payload cache may be provided. The cache managing method including requesting an access to the compressed data, and managing the payload cache using a linked list according to the access request to the compressed data may be provided.

公开(公告)号：US10727348B2

公开(公告)日：2020-07-28

申请号：US16367813

申请日：2019-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Bon-Young Koo ,  Nam-Kyu Kim ,  Woo-Bin Song ,  Byeong-Chan Lee ,  Su-Jin Jung

IPC: H01L27/12 ,  H01L27/088 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

公开(公告)号：US10388791B2

公开(公告)日：2019-08-20

申请号：US15398788

申请日：2017-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Bon-Young Koo ,  Nam-Kyu Kim ,  Woo-Bin Song ,  Byeong-Chan Lee ,  Su-Jin Jung

IPC: H01L27/12 ,  H01L27/088 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

公开(公告)号：US09735158B2

公开(公告)日：2017-08-15

申请号：US15177421

申请日：2016-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/108 ,  H01L27/088 ,  H01L27/02 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

公开(公告)号：US09394509B2

公开(公告)日：2016-07-19

申请号：US14542973

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Won Bae ,  Yong-Sun Ko ,  Seok-Hoon Kim ,  In-Gi Kim ,  Jung-Min Oh ,  Kun-Tack Lee ,  Hyo-San Lee ,  Ji-Hoon Jeong ,  Yong-Jhin Cho

IPC: H01L21/20 ,  C11D11/00 ,  H01L21/02 ,  C11D7/08 ,  C11D7/50 ,  C11D7/10

CPC classification number: C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071

Abstract: A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF2−), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

Abstract translation: 清洗液组合物包括金属氟化物不溶解的有机溶剂，至少一种产生氟化氢的氟化物（HF2-）和去离子水，其中可以以1.5重量％以下的浓度包含去离子水 基于清洁溶液组合物的总重量。

公开(公告)号：US20150299629A1

公开(公告)日：2015-10-22

申请号：US14542973

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Won Bae ,  Yong-Sun Ko ,  Seok-Hoon Kim ,  In-Gi Kim ,  Jung-Min Oh ,  Kun-Tack Lee ,  Hyo-San Lee ,  Ji-Hoon Jeong ,  Yong-Jhin Cho

IPC: C11D11/00 ,  C11D7/08 ,  C11D7/50 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071

Abstract: A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF2−), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

Abstract translation: 清洗液组合物包括金属氟化物不溶解的有机溶剂，至少一种产生氟化氢的氟化物（HF2-）和去离子水，其中可以以1.5重量％以下的浓度包含去离子水 基于清洁溶液组合物的总重量。