公开(公告)号：US20160284703A1

公开(公告)日：2016-09-29

申请号：US15177421

申请日：2016-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

公开(公告)号：US09735158B2

公开(公告)日：2017-08-15

申请号：US15177421

申请日：2016-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/108 ,  H01L27/088 ,  H01L27/02 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

公开(公告)号：US20160149003A1

公开(公告)日：2016-05-26

申请号：US14855533

申请日：2015-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-In Choi ,  Wook-Je Kim ,  Baek-Hap Choi ,  Jin-Hee Han ,  Hyun-Gi Hong

IPC: H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L29/1054 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/28525 ,  H01L21/324 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76897 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/8258 ,  H01L29/6659 ,  H01L29/7834

Abstract: In methods of manufacturing a semiconductor device, a stress channel layer is formed on a semiconductor substrate. A first ion-implantation process is performed on the semiconductor substrate or the stress channel layer at a temperature ranging from about 100° C. to about 600° C. A gate structure is formed on the stress channel layer. A first source/drain region is formed at an upper portion of the stress channel layer adjacent to the gate structure.

Abstract translation: 在制造半导体器件的方法中，在半导体衬底上形成应力沟道层。 在约100℃至约600℃的温度范围内，在半导体衬底或应力沟道层上进行第一离子注入工艺。在应力沟道层上形成栅极结构。 第一源极/漏极区域形成在与栅极结构相邻的应力沟道层的上部。

公开(公告)号：US10147723B2

公开(公告)日：2018-12-04

申请号：US15653733

申请日：2017-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/78 ,  H01L27/11 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.