公开(公告)号：US11676964B2

公开(公告)日：2023-06-13

申请号：US17886530

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-Won Kim ,  Jung-gil Yang

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11060228B2

公开(公告)日：2021-07-13

申请号：US17128614

申请日：2020-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baek Gyu Kwon ,  Dong-Won Kim ,  Do Yun Lee ,  Bo-Kyun Kim ,  Geon Ho Lee

IPC: D06F37/20 ,  D06F39/12 ,  D06F21/04 ,  D06F21/08 ,  D06F37/26 ,  D06F31/00

Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.

公开(公告)号：US09905569B1

公开(公告)日：2018-02-27

申请号：US15472720

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Won Kim ,  Bong-Tae Park ,  Ho-Jun Seong ,  Jae-Hwang Sim ,  Jung-Hoon Jun

IPC: H01L21/8234 ,  H01L27/1157 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/265 ,  H01L21/027 ,  H01L27/11573 ,  H01L29/49 ,  H01L27/11524 ,  H01L27/11534

CPC classification number: H01L27/1157 ,  H01L21/0273 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823468 ,  H01L27/11524 ,  H01L27/11534 ,  H01L27/11573 ,  H01L29/4966

Abstract: A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including first and second spacer structures formed on a sidewall of the second gate structure and sidewalls of the third gate structure. Impurity regions are formed through ion implantation and the first spacer structure shields the second and third gate structures during ion implantation. The second spacer structure defines resulting impurity regions.

公开(公告)号：US09577076B2

公开(公告)日：2017-02-21

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US20160043222A1

公开(公告)日：2016-02-11

申请号：US14667810

申请日：2015-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Sung-II Park ,  Byoung-Hak Hong ,  Toshinori Fukai ,  Mun-Hyeon Kim ,  Woong-Gi Kim ,  Sue-Hye Park ,  Dong-Won Kim ,  Dae-Won Ha

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/7845 ,  H01L21/28123 ,  H01L21/82385 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L29/0649 ,  H01L29/42356 ,  H01L29/66545 ,  H01L29/785

Abstract: Provided is a semiconductor device to which a pattern structure for performance improvement is applied. The semiconductor device includes first and second active regions spaced apart from each other in a first direction with an isolation layer interposed therebetween, a first normal gate formed on the first active region to extend in a second direction crossing the first direction, a first dummy gate having a portion overlapping with one end of the isolation layer and the other portion overlapping with the first active region and spaced apart from the first normal gate in the first direction, a second dummy gate having a portion overlapping with the other end of the isolation layer and the other portion overlapping with the second active region, a first normal source/drain contact formed on a source/drain region between the first normal gate and the first dummy gate, and a dummy contact formed on the isolation layer so as not to overlap with the first and second dummy gates and having a different size from the first normal source/drain contact.

Abstract translation: 提供了一种应用了用于性能改进的图案结构的半导体器件。 所述半导体器件包括在第一方向上彼此间隔开的第一和第二有源区，隔着隔离层彼此隔开的第一正常栅极，形成在第一有源区上以沿与第一方向交叉的第二方向延伸的第一正常栅极，第一伪栅极 具有与所述隔离层的一端重叠的部分，并且所述另一部分与所述第一有源区域重叠并且在所述第一方向上与所述第一正常栅极间隔开，第二伪栅极具有与所述隔离层的另一端重叠的部分 并且另一部分与第二有源区重叠，形成在第一正常栅极和第一伪栅极之间的源极/漏极区域上的第一正常源极/漏极接触器和形成在隔离层上以使得不重叠的虚拟接触 与第一和第二伪栅极并且具有与第一正常源极/漏极接触件不同的尺寸。

公开(公告)号：US11859332B2

公开(公告)日：2024-01-02

申请号：US17340463

申请日：2021-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baek Gyu Kwon ,  Dong-Won Kim ,  Do Yun Lee ,  Bo-Kyun Kim ,  Geon Ho Lee

IPC: D06F37/22 ,  D06F21/04 ,  D06F21/08 ,  D06F37/20 ,  D06F37/26 ,  D06F31/00 ,  D06F39/12

CPC classification number: D06F37/22 ,  D06F21/04 ,  D06F21/08 ,  D06F37/20 ,  D06F37/26 ,  D06F31/00 ,  D06F39/12

Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.

公开(公告)号：US20210292956A1

公开(公告)日：2021-09-23

申请号：US17340463

申请日：2021-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baek Gyu Kwon ,  Dong-Won Kim ,  Do Yun Lee ,  Bo-Kyun Kim ,  Geon Ho Lee

IPC: D06F37/20 ,  D06F39/12 ,  D06F21/04 ,  D06F21/08 ,  D06F37/26

Abstract: A washing machine including a plurality of washers may include a fixing bracket coupled to a front of a first housing in which a first tub is disposed and a front of a second housing in which a second tub is disposed, to prevent the first housing and the second housing from being separated from each other.

公开(公告)号：US11078616B2

公开(公告)日：2021-08-03

申请号：US16462113

申请日：2017-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Hee Ryu ,  Kyoung Woo Lee ,  Dong-Won Kim ,  Yongjie Jin ,  Jun Hong Park

IPC: D06F37/26 ,  D06F25/00 ,  D06F58/02 ,  D06F58/26

Abstract: Disclosed is a washing machine including a drying function. Here, a height of a bottom end of a dryer disposed above a tub is lower than a height of a top end of the tub to have a space for integrating other devices having additional functions above the tub.

公开(公告)号：US10083978B2

公开(公告)日：2018-09-25

申请号：US15867974

申请日：2018-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Won Kim ,  Bong-Tae Park ,  Ho-Jun Seong ,  Jae-Hwang Sim ,  Jung-Hoon Jun

IPC: H01L29/788 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/1157 ,  H01L27/11534 ,  H01L27/11524 ,  H01L21/8234 ,  H01L29/49 ,  H01L21/28 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/027 ,  H01L21/265 ,  H01L21/3213

CPC classification number: H01L27/1157 ,  H01L21/0273 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823468 ,  H01L27/11524 ,  H01L27/11534 ,  H01L27/11573 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/4966 ,  Y02E10/50

Abstract: A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including first and second spacer structures formed on a sidewall of the second gate structure and sidewalls of the third gate structure. Impurity regions are formed through ion implantation and the first spacer structure shields the second and third gate structures during ion implantation. The second spacer structure defines resulting impurity regions.

公开(公告)号：US20180061843A1

公开(公告)日：2018-03-01

申请号：US15472720

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Won Kim ,  Bong-Tae Park ,  Ho-Jun Seong ,  Jae-Hwang Sim ,  Jung-Hoon Jun

IPC: H01L27/1157 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/027 ,  H01L27/11573 ,  H01L29/49 ,  H01L27/11524 ,  H01L27/11534

CPC classification number: H01L27/1157 ,  H01L21/0273 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/823418 ,  H01L21/823456 ,  H01L21/823468 ,  H01L27/11524 ,  H01L27/11534 ,  H01L27/11573 ,  H01L29/4966

Abstract: A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including first and second spacer structures formed on a sidewall of the second gate structure and sidewalls of the third gate structure. Impurity regions are formed through ion implantation and the first spacer structure shields the second and third gate structures during ion implantation. The second spacer structure defines resulting impurity regions.