公开(公告)号：US09559765B2

公开(公告)日：2017-01-31

申请号：US14011561

申请日：2013-08-27

Applicant: Samsung Electronics Co., Ltd. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dae-Kyu Shin ,  Wan Choi ,  Myung-Gil Kang ,  Hyun-Kyu Yu

IPC: H04B7/06 ,  H04J11/00 ,  H04B7/08 ,  H04L25/03 ,  H04B1/12 ,  H04B1/7107

CPC classification number: H04B7/0615 ,  H04B1/12 ,  H04B1/7107 ,  H04B7/0842 ,  H04J11/0053 ,  H04L25/0328

Abstract: An apparatus and a method relieve intercell interference in a wireless communication system. In a method for operating a transmission node, a first private message encoding a portion of transmission data of a neighbor transmission node is received. Weight for canceling the first private message of the neighbor transmission node received in a intended reception node is determined. The first private message of the neighbor transmission node multiplied by the weight, a common message encoding a portion of data to be transmitted to the intended reception node, and a second private message encoding the rest of the data are transmitted.

Abstract translation: 一种减轻无线通信系统中小区间干扰的装置和方法。 在用于操作传输节点的方法中，接收编码相邻传输节点的传输数据的一部分的第一专用消息。 确定用于取消在预定接收节点中接收的邻近发送节点的第一私人消息的权重。 发送相邻传输节点乘以权重的第一个私有消息，编码要发送到预期接收节点的数据的一部分的公共消息，以及编码其余数据的第二私人消息。

公开(公告)号：US09577076B2

公开(公告)日：2017-02-21

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US20140056207A1

公开(公告)日：2014-02-27

申请号：US14011561

申请日：2013-08-27

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY ,  Samsung Electronics Co., Ltd.

Inventor： Dae-Kyu Shin ,  Wan Choi ,  Myung-Gil Kang ,  Hyun-Kyu Yu

IPC: H04W72/00

CPC classification number: H04B7/0615 ,  H04B1/12 ,  H04B1/7107 ,  H04B7/0842 ,  H04J11/0053 ,  H04L25/0328

Abstract: An apparatus and a method relieve intercell interference in a wireless communication system. In a method for operating a transmission node, a first private message encoding a portion of transmission data of a neighbor transmission node is received. Weight for canceling the first private message of the neighbor transmission node received in a intended reception node is determined. The first private message of the neighbor transmission node multiplied by the weight, a common message encoding a portion of data to be transmitted to the intended reception node, and a second private message encoding the rest of the data are transmitted.

Abstract translation: 一种减轻无线通信系统中小区间干扰的装置和方法。 在用于操作传输节点的方法中，接收编码相邻传输节点的传输数据的一部分的第一专用消息。 确定用于取消在预定接收节点中接收的邻近发送节点的第一私人消息的权重。 发送相邻传输节点乘以权重的第一个私有消息，编码要发送到预期接收节点的数据的一部分的公共消息，以及编码其余数据的第二私人消息。

公开(公告)号：US10103800B2

公开(公告)日：2018-10-16

申请号：US14842636

申请日：2015-09-01

Applicant: Samsung Electronics Co., Ltd ,  Korea Advanced Institute of Science and Technology

Inventor： Myung-Gil Kang ,  Wan Choi ,  Dae-Kyu Shin ,  Sang-Wook Suh

IPC: H04B7/06 ,  H04W16/28 ,  H04B7/0408 ,  H04B7/022

Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. Disclosed are a method and an apparatus for performing adaptive beam hopping in a multi-cell multi-user communication system. The method includes: making a request for allowing multiple accesses for beam hopping for a predetermined operation time to a plurality of accessible base stations (BSs); receiving a response to the request from two or more BSs among the plurality of BSs and determining, according to a predetermined reference, beams above the reference among transmission beams of the two or more BSs as available beams; determining a beam hopping pattern based on the determined available beams and transmitting the determined hopping pattern to the two or more BSs; and forming reception beams based on the determined beam hopping pattern to receive signals.

公开(公告)号：US20160065294A1

公开(公告)日：2016-03-03

申请号：US14842636

申请日：2015-09-01

Applicant: Samsung Electronics Co., Ltd ,  Korea Advanced Institute of Science and Technology

Inventor： Myung-Gil Kang ,  Wan Choi ,  Dae-Hyu Shin ,  Sang-Wook Suh

IPC: H04B7/06 ,  H04B7/04 ,  H04W16/28

CPC classification number: H04B7/0695 ,  H04B7/022 ,  H04B7/0408 ,  H04B7/0617 ,  H04W16/28

Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. Disclosed are a method and an apparatus for performing adaptive beam hopping in a multi-cell multi-user communication system. The method includes: making a request for allowing multiple accesses for beam hopping for a predetermined operation time to a plurality of accessible base stations (BSs); receiving a response to the request from two or more BSs among the plurality of BSs and determining, according to a predetermined reference, beams above the reference among transmission beams of the two or more BSs as available beams; determining a beam hopping pattern based on the determined available beams and transmitting the determined hopping pattern to the two or more BSs; and forming reception beams based on the determined beam hopping pattern to receive signals.

Abstract translation: 本公开涉及用于利用物联网（IoT）技术来融合第五代（5G）通信系统以用于支持超过第四代（4G）系统的更高数据速率的通信方法和系统。 本发明可以应用于基于5G通信技术和智能家居，智能建筑，智能城市，智能汽车，连接汽车，医疗保健，数字教育，智能零售，安全和智能汽车的IoT相关技术的智能服务， 安全服务。 公开了一种在多小区多用户通信系统中执行自适应跳频的方法和装置。 该方法包括：向多个可访问基站（BS）发出允许用于波束跳跃的多次访问以达到预定操作时间的请求; 从所述多个BS中的两个或更多个BS接收对所述请求的响应，并且根据预定参考，将所述两个或更多个BS的发射波束之中的参考信号确定为可用波束; 基于所确定的可用波束确定波束跳变模式，并将所确定的跳频模式发送到所述两个或更多个BS; 以及基于所确定的跳频图案形成接收波束以接收信号。

公开(公告)号：US20150325683A1

公开(公告)日：2015-11-12

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US20130237210A1

公开(公告)日：2013-09-12

申请号：US13789506

申请日：2013-03-07

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY ,  SAMSUNG ELECTRONICS CO., LTD

Inventor： Myung-Gil Kang ,  Wan Choi

IPC: H04W72/04

CPC classification number: H04W72/0426 ,  H04B7/024 ,  H04B7/0413 ,  H04B7/0456 ,  H04B7/0617 ,  H04B7/086 ,  H04L1/0002 ,  H04L1/007 ,  H04L5/0035 ,  H04L5/0073 ,  H04L2001/0093

Abstract: Data transmitting and receiving apparatus and method for control intercell interference efficiently in a mobile communication system. A mobile communication system includes distributed small base stations including a super node and two or more general nodes. Each of the general nodes processes and transmits first data for transmission, and outputs second data independent of the first data to the super node. The super node receives the second data from the respective general nodes, and processes and transmits the second data and third data for transmission.

Abstract translation: 用于在移动通信系统中有效控制小区间干扰的数据发送和接收装置及方法。 移动通信系统包括包括超级节点和两个或多个通用节点的分布式小型基站。 每个通用节点处理和发送用于传输的第一数据，并将与第一数据无关的第二数据输出到超级节点。 超级节点从相应的一般节点接收第二数据，并处理并发送第二数据和第三数据以进行传输。

公开(公告)号：USRE49988E1

公开(公告)日：2024-05-28

申请号：US17569902

申请日：2022-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Gil Kang ,  Sung-Bong Kim ,  Chang-Woo Oh ,  Dong-Won Kim

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L29/775 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/78696

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

公开(公告)号：US10778284B2

公开(公告)日：2020-09-15

申请号：US15235066

申请日：2016-08-11

Applicant: Samsung Electronics Co., Ltd ,  Korea Advanced Institute of Science & Technology

Inventor： Kwang-Taik Kim ,  Wan Choi ,  Myung-Gil Kang ,  Hyo-Woon Seo ,  Kyung-Rak Son

IPC: H04B3/20 ,  H04B7/0452 ,  H04B7/06 ,  H04W4/70 ,  H04B7/022 ,  H04W88/10

Abstract: A method includes generating preference information according to each of a plurality of base stations including at least one adjacent base station and transmitting the generated preference information to a serving base station, receiving, from the serving base station, information related to beams of the serving base station and the at least one adjacent base station determined based on the preference information, and receiving a signal by using the information related to the beams, wherein the information related to the beams includes beam information on a partial area in which interference signals transmitted by the at least one adjacent base station are aligned among a whole reception area of the terminal. A serving base station includes a controller configured to configure beams for a partial area in which interference signals transmitted by the at least one adjacent base station are aligned among a whole reception area of the terminal.

公开(公告)号：US10297601B2

公开(公告)日：2019-05-21

申请号：US15351739

申请日：2016-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum Kim ,  Myung-Gil Kang ,  Kang-Hun Moon ,  Cho-Eun Lee ,  Su-Jin Jung ,  Min-Hee Choi ,  Yang Xu ,  Dong-Suk Shin ,  Kwan-Heum Lee ,  Hoi-Sung Chung

IPC: H01L27/11 ,  H01L29/66 ,  H01L29/78 ,  H01L23/528 ,  H01L27/088 ,  H01L29/08 ,  H01L29/161 ,  H01L29/45 ,  H01L23/485 ,  H01L21/8234 ,  H01L29/417 ,  H01L27/092 ,  H01L29/165

Abstract: A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.