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    STT-MRAM CELL STRUCTURES
    7.
    发明申请
    STT-MRAM CELL STRUCTURES 审中-公开

    公开(公告)号：US20170140806A1

    公开(公告)日：2017-05-18

    申请号：US15421204

    申请日：2017-01-31

    Applicant: Micron Technology, Inc.

    Inventor： Jun Liu ,  Gurtej Sandhu

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/66007 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

    SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE
    9.
    发明申请
    SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE 有权
    用于光电子和电子结构的半导体衬底及其制造方法

    公开(公告)号：US20150243546A1

    公开(公告)日：2015-08-27

    申请号：US14698091

    申请日：2015-04-28

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Roy Meade ,  Gurtej Sandhu

    IPC: H01L21/762 ,  G02B6/13 ,  H01L21/308

    CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

    Abstract translation: 提供了一种形成具有适用于电子和光子器件集成的隔离区的衬底的方法。 常用的掩模版和光刻技术用于制造掩模，其限定用于蚀刻衬底中的第一和第二沟槽隔离区的开口，其中用于第二沟槽隔离区的开口比第一沟槽隔离区的开口宽。 通过掩模在衬底中蚀刻第一和第二沟槽隔离区域。 第二沟槽隔离区域被进一步蚀刻到比第一沟槽隔离区域更深的位置。 沟槽隔离区填充氧化物材料。 电子器件可以形成在衬底上并由第一沟槽隔离区域电隔离，并且光子器件可以形成在第二沟槽隔离区域上并且与衬底光学隔离。

    Method for providing electrical connections to spaced conductive lines
    10.
    发明授权
    Method for providing electrical connections to spaced conductive lines 有权
    为间隔导线提供电气连接的方法

    公开(公告)号：US08987906B2

    公开(公告)日：2015-03-24

    申请号：US14258476

    申请日：2014-04-22

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej Sandhu ,  Scott Sills

    IPC: H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  H01L27/108 ,  H01L21/308 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8238

    CPC classification number: H01L27/10885 ,  H01L21/28008 ,  H01L21/28035 ,  H01L21/28518 ,  H01L21/3081 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/528 ,  H01L23/5283 ,  H01L27/10888 ,  H01L27/10891 ,  H01L2224/06138 ,  H01L2924/12044

    Abstract: An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.

    Abstract translation: 集成电路和形成方法提供形成在至少一个线性延伸导线的成角度端的接触区域。 在一个实施例中，具有接触着陆焊盘的导电线通过在掩模材料中图案化线形成，切割至少一条材料线以相对于材料线的延伸方向形成一角度，从所述材料线的成角度的端面形成延伸部 掩模材料，并通过使用所述材料线和延伸作为掩模进行蚀刻来图案化下面的导体。 在另一个实施例中，至少一条导线相对于导线的延伸方向以一定角度被切割，以产生成角度的端面，并且电接触着陆垫形成为与成角度的端面接触。

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