公开(公告)号：US11322629B2

公开(公告)日：2022-05-03

申请号：US17145301

申请日：2021-01-09

Applicant: Micron Technology, Inc. ,  Massachusetts Institute of Technology

Inventor： Roy Meade ,  Karan Mehta ,  Efraim Megged ,  Jason Orcutt ,  Milos Popovic ,  Rajeev Ram ,  Jeffrey Shainline ,  Zvi Sternberg ,  Vladimir Stojanovic ,  Ofer Tehar-Zahav

IPC: H01L31/0232 ,  H01L31/0368 ,  H01L27/144 ,  H01L31/18

Abstract: Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

公开(公告)号：US11002914B2

公开(公告)日：2021-05-11

申请号：US15701262

申请日：2017-09-11

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02B6/30 ,  G02B6/34 ,  G02F1/29 ,  G02F1/139 ,  G02B5/30 ,  G02B6/12 ,  G02B6/27 ,  G02B6/42 ,  G02B6/124 ,  G02F1/13363

Abstract: Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system.

公开(公告)号：US20190013452A1

公开(公告)日：2019-01-10

申请号：US16105755

申请日：2018-08-20

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L33/64 ,  G02F1/313 ,  G02B6/12 ,  G02F1/01

CPC classification number: H01L33/64 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/12007 ,  G02B2006/121 ,  G02B2006/12135 ,  G02F1/0147 ,  G02F1/3132 ,  G02F1/3133 ,  G02F2203/15 ,  H01L2933/0075

Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.

公开(公告)号：US10109640B2

公开(公告)日：2018-10-23

申请号：US15867089

申请日：2018-01-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade

IPC: G11C11/34 ,  H01L27/11568 ,  H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/792 ,  H01L29/51 ,  H01L27/115 ,  H01L27/11521 ,  H01L21/326 ,  H01L29/788 ,  H01L29/78

Abstract: Methods for fabricating a transistor include forming a dielectric material adjacent to a semiconductor, introducing non-hydrogenous ions into the dielectric material, and forming a control gate adjacent to the dielectric material. Transistors include source/drain regions in a semiconductor, a dielectric material adjacent to the semiconductor and containing non-hydrogenous ions, and a control gate adjacent to the dielectric material.

公开(公告)号：US09958624B2

公开(公告)日：2018-05-01

申请号：US15640041

申请日：2017-06-30

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/30 ,  G02B6/32 ,  G02B6/42

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a protonic device and method of fabrication of same. The structure optically aligns an optical fiber to the protonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US09791629B2

公开(公告)日：2017-10-17

申请号：US14972376

申请日：2015-12-17

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02B6/30 ,  G02B6/34 ,  G02F1/139 ,  G02F1/29 ,  G02B5/30 ,  G02B6/12 ,  G02B6/27 ,  G02B6/42 ,  G02B6/124 ,  G02F1/13363

CPC classification number: G02B6/30 ,  G02B5/3016 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/2706 ,  G02B6/34 ,  G02B6/4221 ,  G02F1/1393 ,  G02F1/292 ,  G02F2001/133638 ,  G02F2203/24

Abstract: Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system.

公开(公告)号：US20170139163A1

公开(公告)日：2017-05-18

申请号：US15362578

申请日：2016-11-28

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/42 ,  G02B6/30 ,  G02B6/32

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

公开(公告)号：US20150243546A1

公开(公告)日：2015-08-27

申请号：US14698091

申请日：2015-04-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L21/762 ,  G02B6/13 ,  H01L21/308

CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

Abstract translation: 提供了一种形成具有适用于电子和光子器件集成的隔离区的衬底的方法。 常用的掩模版和光刻技术用于制造掩模，其限定用于蚀刻衬底中的第一和第二沟槽隔离区的开口，其中用于第二沟槽隔离区的开口比第一沟槽隔离区的开口宽。 通过掩模在衬底中蚀刻第一和第二沟槽隔离区域。 第二沟槽隔离区域被进一步蚀刻到比第一沟槽隔离区域更深的位置。 沟槽隔离区填充氧化物材料。 电子器件可以形成在衬底上并由第一沟槽隔离区域电隔离，并且光子器件可以形成在第二沟槽隔离区域上并且与衬底光学隔离。

公开(公告)号：US20150063826A1

公开(公告)日：2015-03-05

申请号：US14534635

申请日：2014-11-06

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H04B10/516

CPC classification number: H04B10/516 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/29343 ,  G02F1/035 ,  G02F1/2252

Abstract: An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature.

Abstract translation: 一种光波导，用于以第一频率传输输入到光波导的光信号。 光波导包括沿着光传输通道配置的多个调制器电路。 每个调制器电路包括当包括至少一个谐振结构的调制器电路处于共振温度时以第一频率谐振的至少一个谐振结构。 每个调制器电路具有不同的谐振温度。

公开(公告)号：US20140341503A1

公开(公告)日：2014-11-20

申请号：US14446744

申请日：2014-07-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: G02B6/122

CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

Abstract translation: 提供了一种形成具有适用于电子和光子器件集成的隔离区的衬底的方法。 常用的掩模版和光刻技术用于制造掩模，其限定用于蚀刻衬底中的第一和第二沟槽隔离区的开口，其中用于第二沟槽隔离区的开口比第一沟槽隔离区的开口宽。 通过掩模在衬底中蚀刻第一和第二沟槽隔离区域。 第二沟槽隔离区域被进一步蚀刻到比第一沟槽隔离区域更深的位置。 沟槽隔离区填充氧化物材料。 电子器件可以形成在衬底上并由第一沟槽隔离区域电隔离，并且光子器件可以形成在第二沟槽隔离区域上并且与衬底光学隔离。