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    POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS
    3.
    发明申请
    POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, MEMORY CELLS INCLUDING SUCH MATERIALS, AND RELATED DEVICES AND METHODS 审中-公开
    POLAR，CHIRAL和非中心对称电磁材料，包括这些材料的记忆细胞，以及相关的装置和方法

    公开(公告)号：US20150340372A1

    公开(公告)日：2015-11-26

    申请号：US14282520

    申请日：2014-05-20

    Applicant: Micron Technology, Inc.

    Inventor： Sumeet C. Pandey ,  Lei Bi ,  Roy E. Meade ,  Qian Tao ,  Ashonita A. Chavan

    IPC: H01L27/115 ,  H01L49/02

    CPC classification number: H01L27/11507 ,  H01L21/28291 ,  H01L27/1159 ,  H01L28/55 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

    Abstract: A ferroelectric memory device includes a plurality of memory cells. Each of the memory cells comprises at least one electrode and a ferroelectric crystalline material disposed proximate the at least one electrode. The ferroelectric crystalline material is polarizable by an electric field capable of being generated by electrically charging the at least one electrode. The ferroelectric crystalline material comprises a polar and chiral crystal structure without inversion symmetry through an inversion center. The ferroelectric crystalline material does not consist essentially of an oxide of at least one of hafnium (Hf) and zirconium (Zr).

    Abstract translation: 铁电存储器件包括多个存储单元。 每个存储单元包括设置在至少一个电极附近的至少一个电极和铁电晶体材料。 铁电晶体材料可以通过能够通过对至少一个电极进行充电而产生的电场来极化。 铁电晶体材料包括极性和手性晶体结构，通过反转中心不具有反转对称性。 铁电晶体材料基本上不包括铪（Hf）和锆（Zr）中的至少一种的氧化物。

    Resistive memory sensing
    4.
    发明授权
    Resistive memory sensing 有权
    电阻式记忆感测

    公开(公告)号：US09058875B2

    公开(公告)日：2015-06-16

    申请号：US13921951

    申请日：2013-06-19

    Applicant: Micron Technology, Inc.

    Inventor： D. V. Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Lei Bi ,  Adam D. Johnson ,  Brent Keeth ,  Alessandro Calderoni ,  Scott E. Sills

    IPC: G11C13/00

    CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0069 ,  G11C2013/0047 ,  G11C2013/0057

    Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

    Abstract translation: 本公开包括用于感测电阻式存储单元的装置和方法。 许多实施例包括对存储器单元执行感测操作以确定与存储器单元相关联的当前值，将编程信号施加到存储器单元，以及基于与存储器单元相关联的当前值来确定存储器单元的数据状态 在施加编程信号之前应用编程信号的存储单元和与存储器单元相关联的当前值。

    RESISTIVE MEMORY SENSING
    7.
    发明申请
    RESISTIVE MEMORY SENSING 有权
    电阻记忆感应

    公开(公告)号：US20140169066A1

    公开(公告)日：2014-06-19

    申请号：US13921951

    申请日：2013-06-19

    Applicant: Micron Technology, Inc.

    Inventor： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Lei Bi ,  Adam D. Johnson ,  Brent Keeth ,  Alessandro Calderoni ,  Scott E. Sills

    IPC: G11C13/00

    CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0069 ,  G11C2013/0047 ,  G11C2013/0057

    Abstract: The present disclosure includes apparatuses and methods for sensing a resistive memory cell. A number of embodiments include performing a sensing operation on a memory cell to determine a current value associated with the memory cell, applying a programming signal to the memory cell, and determining a data state of the memory cell based on the current value associated with the memory cell before applying the programming signal and a current value associated with the memory cell after applying the programming signal.

    Abstract translation: 本公开包括用于感测电阻式存储单元的装置和方法。 许多实施例包括对存储器单元执行感测操作以确定与存储器单元相关联的当前值，将编程信号施加到存储器单元，以及基于与存储器单元相关联的当前值来确定存储器单元的数据状态 在施加编程信号之前应用编程信号的存储单元和与存储器单元相关联的当前值。

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