METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20120286260A1

    公开(公告)日:2012-11-15

    申请号:US13461808

    申请日:2012-05-02

    IPC分类号: H01L29/786 H01L21/34

    摘要: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.

    摘要翻译: 提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。 通过使用晶体管,提供了难以实现的高性能半导体器件。 晶体管包括含有选自铟,锡,锌和铝中的两种或更多种,优选三种或更多种元素的氧化物半导体膜。 在加热基板的状态下形成氧化物半导体膜。 此外,在晶体管的制造过程中,通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧,从而尽可能地减少产生载流子的氧气缺乏。 此外,在晶体管的制造过程中,氧化物半导体膜被高度纯化,使得氢的浓度极低。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20110284839A1

    公开(公告)日:2011-11-24

    申请号:US13107283

    申请日:2011-05-13

    IPC分类号: H01L29/04 H01L21/20

    摘要: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

    摘要翻译: 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜,从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质,例如氢,水,羟基或氢化物,其导致包括氧化物半导体的晶体管的电特性发生变化,从而防止氧化物半导体膜进入氧化物半导体膜,由此氧化物半导体膜可以被高度纯化 并制成电i型(本征)半导体。

    LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE
    6.
    发明申请
    LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE 有权
    逻辑电路和半导体器件

    公开(公告)号:US20110089975A1

    公开(公告)日:2011-04-21

    申请号:US12901057

    申请日:2010-10-08

    IPC分类号: H03K19/08 H01L29/12

    摘要: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

    摘要翻译: 逻辑电路包括具有使用氧化物半导体形成的沟道形成区域的薄膜晶体管,以及通过关闭薄膜晶体管而使端子中的一个成为浮置状态的电容器。 氧化物半导体的氢浓度为5×1019(原子/ cm3)以下,因此在不产生电场的状态下基本上用作绝缘体。 因此,可以减小薄膜晶体管的截止电流,从而通过薄膜晶体管抑制存储在电容器中的电荷的泄漏。 因此,可以防止逻辑电路的故障。 此外,可以通过减小薄膜晶体管的截止电流来降低在逻辑电路中流动的过量的电流,导致逻辑电路的低功耗。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20110084271A1

    公开(公告)日:2011-04-14

    申请号:US12899962

    申请日:2010-10-07

    IPC分类号: H01L29/12 H01L33/08 B82Y99/00

    摘要: Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.

    摘要翻译: 公开了一种高可靠性的半导体器件及其制造方法,其通过使用具有良好的电特性和高可靠性的晶体管作为开关元件来实现。 半导体器件包括驱动电路部分和一个衬底上的像素部分,并且像素部分包括透光底栅晶体管。 透光底栅晶体管包括:透明栅极电极层; 在所述栅极电极层上的氧化物半导体层,所述氧化物半导体层的表面层包括微晶纳米晶体组; 以及形成在所述氧化物半导体层上的源极和漏极电极层,所述源极和漏极电极层包括透光氧化物导电层。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20110008931A1

    公开(公告)日:2011-01-13

    申请号:US12832329

    申请日:2010-07-08

    IPC分类号: H01L21/36

    摘要: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

    摘要翻译: 一种高度可靠的半导体器件及其制造方法,其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中,减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层(脱水或脱氢的热处理)。 氧化物半导体层中的水分等杂质,以及存在于栅极绝缘层中的杂质都会降低,氧化物半导体层和氧化物半导体层之间的界面中存在的杂质如氧化物半导体层和与氧化物半导体层接触的薄膜 减少了

    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE
    10.
    发明申请
    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 有权
    氧化物材料和半导体器件

    公开(公告)号:US20120153364A1

    公开(公告)日:2012-06-21

    申请号:US13325700

    申请日:2011-12-14

    IPC分类号: H01L29/78 H01B1/00 C01B13/00

    摘要: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

    摘要翻译: 目的是提供适用于晶体管,二极管等中所包含的半导体的材料。 另一个目的是提供一种包括晶体管的半导体器件,其中与氧化物半导体膜接触的氧化物半导体膜和栅极绝缘膜之间的界面处的电子态的条件是有利的。 此外,另一个目的是通过给氧化半导体膜用于沟道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 使用包括具有c轴对准的晶体的氧化物材料形成半导体器件,当从表面或界面的方向观察时,半导体器件具有三角形或六边形的原子排列,并围绕c轴旋转。