发明申请
- 专利标题: LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE
- 专利标题(中): 逻辑电路和半导体器件
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申请号: US12901057申请日: 2010-10-08
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公开(公告)号: US20110089975A1公开(公告)日: 2011-04-21
- 发明人: Shunpei YAMAZAKI , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
- 申请人: Shunpei YAMAZAKI , Jun KOYAMA , Masashi TSUBUKU , Kosei NODA
- 申请人地址: JP Atsugi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi
- 优先权: JP2009-238914 20091016
- 主分类号: H03K19/08
- IPC分类号: H03K19/08 ; H01L29/12
摘要:
A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.
公开/授权文献
- US08400187B2 Logic circuit and semiconductor device 公开/授权日:2013-03-19
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