METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20110008931A1

    公开(公告)日:2011-01-13

    申请号:US12832329

    申请日:2010-07-08

    IPC分类号: H01L21/36

    摘要: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

    摘要翻译: 一种高度可靠的半导体器件及其制造方法,其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中,减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层(脱水或脱氢的热处理)。 氧化物半导体层中的水分等杂质,以及存在于栅极绝缘层中的杂质都会降低,氧化物半导体层和氧化物半导体层之间的界面中存在的杂质如氧化物半导体层和与氧化物半导体层接触的薄膜 减少了

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
    半导体器件及其制造方法相同

    公开(公告)号:US20110006301A1

    公开(公告)日:2011-01-13

    申请号:US12832333

    申请日:2010-07-08

    IPC分类号: H01L29/786 H01L21/34

    摘要: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

    摘要翻译: 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中,其中包括沟道形成区域的半导体层用作氧化物半导体膜,用于减少诸如水分的杂质(脱水或脱氢热处理)的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后,在漏极电极层,栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
    半导体器件及其制造方法相同

    公开(公告)号:US20120319106A1

    公开(公告)日:2012-12-20

    申请号:US13596527

    申请日:2012-08-28

    IPC分类号: H01L29/786

    摘要: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

    摘要翻译: 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中,其中包括沟道形成区域的半导体层用作氧化物半导体膜,用于减少诸如湿度的杂质(脱水或脱氢热处理)的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后,在漏极电极层,栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。

    OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE
    4.
    发明申请
    OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 有权
    氧化物半导体,薄膜晶体管和显示器件

    公开(公告)号:US20100102312A1

    公开(公告)日:2010-04-29

    申请号:US12581200

    申请日:2009-10-19

    摘要: An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

    摘要翻译: 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率,并获得足够的开关比,同时抑制截止电流。 氧化物半导体由InMO 3(ZnO)n(M是选自Ga,Fe,Ni,Mn,Co和Al中的一种或多种元素表示,n是大于或等于1的非整数) 小于50),还含有氢。 在这种情况下,使Zn的浓度低于In和M的浓度(M是选自Ga,Fe,Ni,Mn,Co和Al中的一种或多种元素)。 此外,氧化物半导体具有非晶结构。 这里,n优选为大于或等于50,更优选小于10的非整数。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20110003428A1

    公开(公告)日:2011-01-06

    申请号:US12826015

    申请日:2010-06-29

    IPC分类号: H01L21/16

    摘要: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

    摘要翻译: 本发明的目的是提供一种高度可靠的半导体器件,其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中,使用氧化物半导体层形成具有沟道形成区域,源极区域和漏极区域的半导体层,进行热处理(脱水或脱氢的热处理) 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外,在氧气氛下缓慢冷却经受热处理的氧化物半导体层。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20110003427A1

    公开(公告)日:2011-01-06

    申请号:US12826007

    申请日:2010-06-29

    IPC分类号: H01L21/16

    摘要: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

    摘要翻译: 本发明的目的是提供一种高度可靠的半导体器件,其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中,其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域,源极区域和漏极区域的半导体层,用于还原杂质的热处理 进行湿度(脱水或脱氢热处理)以提高氧化物半导体层的纯度。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20120264244A1

    公开(公告)日:2012-10-18

    申请号:US13495432

    申请日:2012-06-13

    IPC分类号: H01L33/08

    摘要: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

    摘要翻译: 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中,进行热处理(脱水或脱氢)以提高氧化物半导体膜的纯度 并减少杂质,包括水分等。 之后,在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外,热处理会导致在栅极绝缘层中退出的杂质,包括氧化物半导体膜和膜之间的界面中的杂质,氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。