摘要:
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
摘要:
An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.
摘要:
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
摘要:
A method for manufacturing a device, including evaporating a material at a first position, and moving a container that includes the material to a second position, so that an opening of the container is heated at a second temperature higher than a first temperature, the first temperature being a temperature of the opening at the first position, is provided.
摘要:
It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after oxygen is added to the oxide semiconductor layer, heat treatment is performed on the oxide semiconductor layer to remove the impurities. In order to add oxygen, it is preferable to use a method in which oxygen having high energy is added by an ion implantation method, an ion doping method, or the like.
摘要:
There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.
摘要:
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
摘要:
An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions between a pair of electrode layers. In the light-emitting element including the functional layer and the light-emitting element containing an organic compound, a mixed-valence compound is contained in the functional layers. When an element in a compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound.
摘要:
There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.
摘要:
It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.