公开(公告)号：US08841163B2

公开(公告)日：2014-09-23

申请号：US13399369

申请日：2012-02-17

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L21/324 ,  H01L21/28 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US08796078B2

公开(公告)日：2014-08-05

申请号：US12787757

申请日：2010-05-26

申请人： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

发明人： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

IPC分类号： H01L21/336 ,  H01L21/786

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02565 ,  H01L21/30604 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

摘要翻译： 目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。 此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。 在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。 此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。 通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。

公开(公告)号：US08609478B2

公开(公告)日：2013-12-17

申请号：US12826007

申请日：2010-06-29

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/84

CPC分类号： H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在制造半导体器件的方法中，该半导体器件包括薄膜晶体管，其中使用氧化物半导体层形成包括使用氧化物半导体层的沟道形成区域，源极区域和漏极区域的半导体层，用于减少杂质的热处理 例如水分（用于脱水或脱氢的热处理）以提高氧化物半导体层的纯度。

公开(公告)号：US08524313B2

公开(公告)日：2013-09-03

申请号：US13405478

申请日：2012-02-27

申请人： Hiroki Ohara

发明人： Hiroki Ohara

IPC分类号： C23C16/448

CPC分类号： C23C14/246 ,  C23C14/12 ,  C23C14/243 ,  C23C14/26

摘要： A method for manufacturing a device, including evaporating a material at a first position, and moving a container that includes the material to a second position, so that an opening of the container is heated at a second temperature higher than a first temperature, the first temperature being a temperature of the opening at the first position, is provided.

摘要翻译： 一种用于制造装置的方法，包括在第一位置蒸发材料，以及将包括所述材料的容器移动到第二位置，使得所述容器的开口在高于第一温度的第二温度下被加热，所述第一 提供了在第一位置处的开口的温度的温度。

公开(公告)号：US08518755B2

公开(公告)日：2013-08-27

申请号：US13029173

申请日：2011-02-17

申请人： Shunpei Yamazaki ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Hiroki Ohara

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/331 ,  H01L21/322

CPC分类号： H01L21/02521 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/7869

摘要： It is an object to provide a highly reliable semiconductor device, a semiconductor device with low power consumption, a semiconductor device with high productivity, and a method for manufacturing such a semiconductor device. Impurities left remaining in an oxide semiconductor layer are removed without generating oxygen deficiency, and the oxide semiconductor layer is purified to have an extremely high purity. Specifically, after oxygen is added to the oxide semiconductor layer, heat treatment is performed on the oxide semiconductor layer to remove the impurities. In order to add oxygen, it is preferable to use a method in which oxygen having high energy is added by an ion implantation method, an ion doping method, or the like.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，具有低功耗的半导体器件，高生产率的半导体器件及其制造方法。 残留在氧化物半导体层中的杂质被除去而不产生氧缺陷，氧化物半导体层被纯化成具有非常高的纯度。 具体地说，在向氧化物半导体层添加氧之后，对氧化物半导体层进行热处理以除去杂质。 为了添加氧，优选使用通过离子注入法，离子掺杂法等添加具有高能量的氧的方法。

公开(公告)号：US08436390B2

公开(公告)日：2013-05-07

申请号：US13490516

申请日：2012-06-07

申请人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

摘要翻译： 存在在其上设置的相对基板或防潮层之间的折射率差异，空气保持较大，光提取效率低的问题。 此外，存在容易产生由于防潮层而产生剥离或破裂的问题，导致发光元件的可靠性和寿命恶化。 发光元件包括依次堆叠的像素电极，电致发光层，透明电极，钝化膜，应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此，可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

公开(公告)号：US08377744B2

公开(公告)日：2013-02-19

申请号：US12957437

申请日：2010-12-01

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US08330357B2

公开(公告)日：2012-12-11

申请号：US12964899

申请日：2010-12-10

申请人： Hiroki Ohara

发明人： Hiroki Ohara

IPC分类号： H01J1/62

CPC分类号： H01L51/5048 ,  H01L51/5278

摘要： An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions between a pair of electrode layers. In the light-emitting element including the functional layer and the light-emitting element containing an organic compound, a mixed-valence compound is contained in the functional layers. When an element in a compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound.

摘要翻译： 本发明的目的是提供一种功能可靠的发光元件和具有较低功耗和高发光效率的发光元件。 发光元件具有层叠结构的EL层，该层叠结构包括含有有机化合物的发光元件和在一对电极层之间具有分离功能的功能层。 在包含功能层的发光元件和含有有机化合物的发光元件中，在功能层中含有混合化合物。 当化合物中的元素具有多个价数时，该元素处于被称为混合价态的状态，该化合物被称为混合化合物。

公开(公告)号：US20120299035A1

公开(公告)日：2012-11-29

申请号：US13490516

申请日：2012-06-07

申请人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L33/60

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

摘要翻译： 存在在其上设置的相对基板或防潮层之间的折射率差异，空气保持较大，光提取效率低的问题。 此外，存在容易产生由于防潮层而产生剥离或破裂的问题，导致发光元件的可靠性和寿命恶化。 发光元件包括依次堆叠的像素电极，电致发光层，透明电极，钝化膜，应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此，可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

公开(公告)号：US08216878B2

公开(公告)日：2012-07-10

申请号：US12826015

申请日：2010-06-29

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/66969 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。