发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
-
申请号: US12846534申请日: 2010-07-29
-
公开(公告)号: US20110024750A1公开(公告)日: 2011-02-03
- 发明人: Shunpei YAMAZAKI , Hiroki OHARA , Toshinari SASAKI , Kosei NODA , Hideaki KUWABARA
- 申请人: Shunpei YAMAZAKI , Hiroki OHARA , Toshinari SASAKI , Kosei NODA , Hideaki KUWABARA
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2009-179773 20090731
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/34 ; H01L29/772 ; H01L21/84
摘要:
An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
公开/授权文献
- US08546180B2 Method for manufacturing oxide semiconductor device 公开/授权日:2013-10-01
信息查询
IPC分类: