GATE DIELECTRIC ANTIFUSE CIRCUIT TO PROTECT A HIGH-VOLTAGE TRANSISTOR
    1.
    发明申请
    GATE DIELECTRIC ANTIFUSE CIRCUIT TO PROTECT A HIGH-VOLTAGE TRANSISTOR 有权
    用于保护高压晶体管的栅极电介质防爆电路

    公开(公告)号:US20060231922A1

    公开(公告)日:2006-10-19

    申请号:US11426523

    申请日:2006-06-26

    Abstract: According to embodiments of the present invention, circuits have elements to protect a high-voltage transistor in a gate dielectric antifuse circuit. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a second terminal, and a high-voltage transistor is coupled to the antifuse and has a gate terminal. An intermediate voltage between the supply voltage and the elevated voltage is coupled to the gate terminal of the high-voltage transistor to protect the high-voltage transistor.

    Abstract translation: 根据本发明的实施例,电路具有用于保护栅介质反熔丝电路中的高压晶体管的元件。 反熔丝在耦合以接收升高电压的第一端子和第二端子之间具有栅极电介质层,并且高压晶体管耦合到反熔丝并具有栅极端子。 电源电压和升高电压之间的中间电压耦合到高电压晶体管的栅极端子,以保护高压晶体管。

    Dispensing cap for a container
    4.
    发明授权
    Dispensing cap for a container 有权
    分配容器盖

    公开(公告)号:US08613372B2

    公开(公告)日:2013-12-24

    申请号:US13363953

    申请日:2012-02-01

    Applicant: John Porter

    Inventor: John Porter

    CPC classification number: B65D51/2821 B65D41/3428 B65D51/2828 B65D51/2864

    Abstract: A dispensing cap for a container includes a body portion and an integrally formed chamber for holding an additive substance. The body portion includes a closed top end and an inner wall that defines the chamber whose open end is sealed by a chamber closure member. The closed top end includes a diaphragm and a plunger extends axially from the diaphragm within the chamber for unsealing the chamber closure member. The body portion, the closed top end, the plunger, and the inner wall are integrally formed in one-piece.

    Abstract translation: 用于容器的分配帽包括主体部分和用于保持添加剂物质的整体形成的室。 主体部分包括封闭的顶端和限定腔室的内壁,其开口端由腔室闭合构件密封。 封闭的顶端包括隔膜,柱塞在腔室内从隔膜轴向延伸,用于开封腔室闭合构件。 主体部分,封闭的顶端,柱塞和内壁一体地形成为一体。

    Variable resistance circuit
    6.
    发明申请
    Variable resistance circuit 有权
    可变电阻电路

    公开(公告)号:US20060028287A1

    公开(公告)日:2006-02-09

    申请号:US11246469

    申请日:2005-10-07

    Abstract: A method of finding an unknown value from within a range of values is disclosed that divides the range into weighted subranges and then, beginning with an arbitrary search value within the range, performs a number of simple comparisons to determine the value for each subrange that will result in a match with the target value. This method can also detect those cases where the target value lies outside the range. In one embodiment, the method of finding an unknown value within a range of values is applied to impedance matching. In this embodiment, the output impedance of a pin on an integrated circuit is automatically matched to the impedance of the load connected to it. The output driver has a controllable impedance that can be adjusted within a specific range of impedances to match the external load impedance it is to drive.

    Abstract translation: 公开了一种从值范围内发现未知值的方法,其将范围划分为加权子范围,然后从该范围内的任意搜索值开始执行多个简单比较,以确定每个子范围的值, 导致与目标值匹配。 该方法还可以检测目标值在范围之外的情况。 在一个实施例中,将在值范围内找到未知值的方法应用于阻抗匹配。 在本实施例中,集成电路上的引脚的输出阻抗与连接到其的负载的阻抗自动匹配。 输出驱动器具有可控阻抗,可以在特定阻抗范围内进行调节,以匹配驱动的外部负载阻抗。

    Latch-up prevention for memory cells
    7.
    发明申请
    Latch-up prevention for memory cells 失效
    记忆细胞的锁定预防

    公开(公告)号:US20050286288A1

    公开(公告)日:2005-12-29

    申请号:US11216665

    申请日:2005-08-31

    CPC classification number: H01L27/11 G11C11/412 H01L27/1104

    Abstract: An SRAM memory cell is provided having a pair of cross-coupled CMOS inverters. The sources of the pull-up transistors forming each of the CMOS inverters are coupled to VCC through parasitic resistance of the substrate in which each is formed. The source of the p-type pull-up transistor is therefore always at a potential less than or equal to the potential of the N-well such that the emitter-base junction of the parasitic PNP transistor cannot become forward biased and latch-up cannot occur.

    Abstract translation: 提供具有一对交叉耦合CMOS反相器的SRAM存储单元。 形成每个CMOS反相器的上拉晶体管的源极通过其中形成各自的衬底的寄生电阻耦合到V CC。 因此,p型上拉晶体管的源极总是处于小于或等于N阱的电位的电位,使得寄生PNP晶体管的发射极 - 基极结不能变为正向偏置,并且闭锁不能 发生。

    Operator workstation
    9.
    发明授权
    Operator workstation 有权
    操作员工作站

    公开(公告)号:US06449143B2

    公开(公告)日:2002-09-10

    申请号:US09776092

    申请日:2001-02-02

    CPC classification number: A47B21/00 A47B83/001 A47B2200/0069

    Abstract: An operator workstation has a worksurface and left and right upper support members extending upward from the worksurface. Multiple flat-panel display units are mounted between the support members above the level of the worksurface. The displays are mounted above one another, between the support members. Lower support members support the workstation in connection with a base mounted between the lower support members. The base has a substantially triangular cross-section, while the lower support members have a substantially triangular shape.

    Abstract translation: 操作员工作站具有工作面和从工作面向上延伸的左右上部支撑构件。 多个平板显示单元安装在工作台面上方的支撑构件之间。 显示器彼此安装在支撑构件之间。 下支撑构件支撑工作站与安装在下支撑构件之间的基座相关联。 基部具有大致三角形的横截面,而下支撑构件具有基本上三角形的形状。

    GROUND STUD INSTALLATION ON COMPOSITE STRUCTURES FOR ELECTROSTATIC CHARGES
    10.
    发明申请
    GROUND STUD INSTALLATION ON COMPOSITE STRUCTURES FOR ELECTROSTATIC CHARGES 有权
    静电放电复合结构的地面安装

    公开(公告)号:US20070270002A1

    公开(公告)日:2007-11-22

    申请号:US11834141

    申请日:2007-08-06

    Abstract: Apparatus for bleeding electrical charge and methods for installing a ground stud in a composite structure. The apparatus includes a ground stud and a composite structure including a hole. In one embodiment the ground stud engages the hole in the composite structure in a transition fit. In another embodiment the ground stud is countersunk within the composite structure. Embodiments of the present methods include drilling a hole in the composite structure; inserting the ground stud into the hole such that the ground stud is in electrical contact with conductive fibers within the composite structure; securing the ground stud to the composite structure; and attaching a connective device to the ground stud such that the connective device is in electrical contact with the ground stud. In some embodiments the ground stud and the composite structure engage one another in a transition fit. In some embodiments the ground stud includes a pin, and a portion of the pin that contacts the composite structure is non-threaded. In some embodiments the ground stud is countersunk within the composite structure.

    Abstract translation: 用于电荷放电的装置以及将复合结构中的接地柱安装的方法。 该装置包括接地柱和包括孔的复合结构。 在一个实施例中,接地螺柱以过渡配合接合复合结构中的孔。 在另一个实施例中,接地螺柱在复合结构内是埋头的。 本方法的实施例包括在复合结构中钻孔; 将接地螺栓插入孔中,使得接地螺柱与复合结构内的导电纤维电接触; 将地脚固定在复合结构上; 以及将连接装置连接到接地柱,使得连接装置与接地柱螺纹电接触。 在一些实施例中,接地螺柱和复合结构在过渡拟合中彼此接合。 在一些实施例中,接地螺柱包括销,并且接触复合结构的销的一部分是非螺纹的。 在一些实施例中,接地螺柱在复合结构内是埋头的。

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