摘要:
A semiconductor device includes a semiconductor chip, an electrical connection element for electrically connecting the semiconductor device to a carrier, and a metallization adjoining the electrical connection element, the metallization contains porous nanocrystalline copper that contains portions of organic acids.
摘要:
A radio frequency (RF) semiconductor device to process RF signals in an operating frequency range is provided which includes, a semiconductor chip including a first surface, a second surface opposite to the first surface and sidewalls, the semiconductor chip including an active chip area, a redistribution layer including a first side, the first side of the redistribution layer facing the first surface of the semiconductor chip, an RF absorption layer external to the active chip area, wherein the RF absorption layer includes a doped semiconductor material.
摘要:
A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.
摘要:
A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.
摘要:
A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric material is more than 5 dB/cm at least in a subrange of the first frequency range.
摘要:
A chip carrier for carrying an encapsulated electronic chip, wherein the chip carrier comprises a laminate structure formed as a stack of a plurality of electrically insulating structures and a plurality of electrically conductive structures, and a chip coupling area at an exposed surface of the laminate structure being configured for electrically and mechanically coupling the encapsulated electronic chip, wherein one of the electrically insulating structures is configured as high frequency dielectric made of a material being compatible with low-loss transmission of a high-frequency signal, and wherein at least one of another one of the electrically insulating structures and one of the electrically conductive structures is configured as a thermomechanical buffer for buffering thermally induced mechanical load.
摘要:
A fan-out wafer-level package contains a magnetic field sensor chip and an encapsulation material which at least partially encapsulates the magnetic field sensor chip. Further, the fan-out wafer-level package contains an external electrical contact element formed by a planar solderable metal coating, and an electrical redistribution layer arranged over the encapsulation material and electrically interconnecting the magnetic field sensor chip and the external electrical contact element.
摘要:
A radio-frequency device comprises a printed circuit board and a radio-frequency package, which is mounted on the printed circuit board at a first mounting point and has a radio-frequency chip and a radio-frequency radiation element, wherein the printed circuit board has a first elasticity at least in a first section comprising the first mounting point. The radio-frequency device further comprises a waveguide component, which is mounted on the printed circuit board at a second mounting point and has a waveguide, wherein the radio-frequency radiation element is configured to radiate signals into the waveguide and/or to receive signals by way of the waveguide. The printed circuit board has a second elasticity at least in a second section with an increased elasticity between the first mounting point and the second mounting point, wherein the second elasticity is higher than the first elasticity.
摘要:
A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.
摘要:
A device includes a radio frequency chip and a heat sink arranged over the radio frequency chip. The device further includes a layer stack arranged between the radio frequency chip and the heat sink. The layer stack includes a first layer including a first material, a thermal interface material, and a metal layer arranged between the first material and the thermal interface material.