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公开(公告)号:US20240377271A1
公开(公告)日:2024-11-14
申请号:US18782048
申请日:2024-07-24
Applicant: Infineon Technologies AG
Inventor: Rainer Markus SCHALLER , Thomas MUELLER , Bernhard WINKLER
Abstract: In some embodiments, a pressure sensor comprises may comprise a housing, a flexible membrane which, together with the housing, forms a hermetically closed cavity, a sensor element arranged in the hermetically closed cavity, and a gaseous medium in the hermetically closed cavity. The sensor may measure an external pressure on the flexible membrane based on at least one of: a pressure of a gas in the hermetically closed cavity, and/or an amount of time of a time of flight of an optical pulse or a sound pulse emitted by the sensor element reflected from the flexible membrane.
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公开(公告)号:US20240151674A1
公开(公告)日:2024-05-09
申请号:US18496428
申请日:2023-10-27
Applicant: Infineon Technologies AG
Inventor: Horst THEUSS , Rainer Markus SCHALLER
Abstract: The application relates to a semiconductor device for measuring hydrogen including a sensor chip having a sensor layer, which changes its mechanical stress upon contact with hydrogen. The sensor chip furthermore has a sensor for detecting the change in stress, wherein the construction of the semiconductor device affords the sensor layer and/or the sensor protection against further mechanical stresses. The application furthermore relates to a method for measuring a hydrogen concentration.
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公开(公告)号:US20240027412A1
公开(公告)日:2024-01-25
申请号:US18347130
申请日:2023-07-05
Applicant: Infineon Technologies AG
Inventor: Rainer Markus SCHALLER , Klaus ELIAN
IPC: G01N33/00
CPC classification number: G01N33/0016
Abstract: What is disclosed is a hydrogen sensor (100) having a housing (101) that includes a cavity (102) and has a passage opening (103) from the cavity (102) to a gas connection of the hydrogen sensor (100) or an environment, having a first hydrogen sensor element (104), disposed in the cavity (102), for measurement of a hydrogen content in the cavity (102), having a first sorption element (105) for sorption of water and/or water vapor, especially an adsorption element (105) for adsorption of water and/or water vapor, and having a first heater (106) for bakeout of the first sorption element (105), wherein the first sorption element (105) has open pores and is disposed in the passage opening (103).
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公开(公告)号:US20230296567A1
公开(公告)日:2023-09-21
申请号:US18322755
申请日:2023-05-24
Applicant: Infineon Technologies AG
Inventor: Rainer Markus SCHALLER , Matthias EBERL , Simon GASSNER , Franz JOST , Stefan KOLB
IPC: G01N29/24
CPC classification number: G01N29/2425 , G01N33/0004
Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.
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公开(公告)号:US20230292626A1
公开(公告)日:2023-09-14
申请号:US18179700
申请日:2023-03-07
Applicant: Infineon Technologies AG
Inventor: Rainer Markus SCHALLER , Jochen DANGELMAIER , Klaus ELIAN
Abstract: A magnetic field sensor having a semiconductor chip is proposed, the semiconductor chip having at least one magnetic field sensor element, the semiconductor chip being embedded in a semiconductor chip encapsulation, having a permanent magnet, the permanent magnet being embedded in a magnet encapsulation, wherein an interface between the semiconductor chip encapsulation and the magnet encapsulation extends as far as a free surface of the magnetic field sensor. Methods for producing a magnetic field sensor are furthermore disclosed.
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公开(公告)号:US20230102575A1
公开(公告)日:2023-03-30
申请号:US17934057
申请日:2022-09-21
Applicant: Infineon Technologies AG
Inventor: Daniel KÖHLER , Vlad BUICULESCU , Florian BRANDL , Dirk MEINHOLD , Erhard LANDGRAF , Rainer Markus SCHALLER , Markus ECKINGER
Abstract: A sensor for parallel measurement of pressure and acceleration of a vehicle, including a substrate, a sensor element disposed on the substrate, a material being connected with the sensor element and being exposed to the environment of the sensor, wherein the material is configured to act as a seismic mass, and an electronic circuitry connected with the sensor element and including a first filter and a second filter, wherein the first and second filters have different filter characteristics so that an output of the first filter is representative for the pressure and an output of the second is representative for the acceleration.
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公开(公告)号:US20210063445A1
公开(公告)日:2021-03-04
申请号:US16947910
申请日:2020-08-24
Applicant: Infineon Technologies AG
Inventor: Rainer Markus SCHALLER , Juergen HOEGERL , Volker STRUTZ
Abstract: A sensor device comprises a dielectric substrate, a busbar mechanically connected to the dielectric substrate, a cavity formed in the dielectric substrate, and a sensor chip arranged in the cavity, wherein the sensor chip is designed to detect a magnetic field induced by an electric current flowing through the busbar, wherein in an orthogonal projection of the sensor chip onto the busbar, the sensor chip at least partly overlaps the busbar.
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公开(公告)号:US20250011164A1
公开(公告)日:2025-01-09
申请号:US18755216
申请日:2024-06-26
Applicant: Infineon Technologies AG
Inventor: Klaus ELIAN , Jochen DANGELMAIER , Rainer Markus SCHALLER
Abstract: A sensor device includes a semiconductor chip and a package enclosing the semiconductor chip. The semiconductor chip includes integrated sensor circuitry configured to sense a characteristic of a gas in vicinity of the semiconductor chip. The package includes electrical contacts to the integrated sensor circuitry, at least one gas port enabling access of the gas into the package and to the semiconductor chip, a heating element configured to heat an interior portion of the package.
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9.
公开(公告)号:US20240234227A9
公开(公告)日:2024-07-11
申请号:US18485953
申请日:2023-10-12
Applicant: Infineon Technologies AG
Inventor: Martin MAYER , Rainer Markus SCHALLER
CPC classification number: H01L23/295 , H01L21/565 , H01L23/3107 , H01L24/48 , H01L2224/48245 , H01L2924/186
Abstract: A semiconductor device contains a chip carrier and a semiconductor chip arranged on the chip carrier. Furthermore, the semiconductor device comprises an intermediate layer arranged between the chip carrier and the semiconductor chip, and an encapsulation material at least partially encapsulating the semiconductor chip. Filler particles are embedded in at least one of the interlayer or the encapsulation material, wherein the filler particles contain a semiconductor material with a band gap in a range from 2.3 eV to 3.6 eV.
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10.
公开(公告)号:US20240153885A1
公开(公告)日:2024-05-09
申请号:US18498537
申请日:2023-10-31
Applicant: Infineon Technologies AG
Inventor: Rainer Markus SCHALLER , Martin MAYER , Volker STRUTZ
IPC: H01L23/552 , G01R15/20 , G01R19/00 , H01L21/48 , H01L23/00 , H01L23/495
CPC classification number: H01L23/552 , G01R15/202 , G01R19/0092 , H01L21/4803 , H01L21/4846 , H01L23/49534 , H01L23/49589 , H01L24/48 , H01L2224/48091 , H01L2224/48245
Abstract: A semiconductor device contains an electrically conductive carrier and a semiconductor chip arranged on the carrier. Furthermore, the semiconductor device contains a layer stack arranged between the carrier and the semiconductor chip and having a plurality of dielectric layers. The layer stack galvanically isolates the semiconductor chip and the carrier from one another. At least one of the plurality of dielectric layers is coated with an electrically conductive coating.
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