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    DETECTING SENSITIVITY FAULTS IN CAPACITIVE SENSORS BY USING PULL-IN FUNCTIONALITY
    3.
    发明申请
    DETECTING SENSITIVITY FAULTS IN CAPACITIVE SENSORS BY USING PULL-IN FUNCTIONALITY 有权

    公开(公告)号：US20230064937A1

    公开(公告)日：2023-03-02

    申请号：US17463753

    申请日：2021-09-01

    Applicant: Infineon Technologies AG

    Inventor： Dan-Ioan-Dumitru STOICA ,  Cesare BUFFA ,  Alessandro CASPANI ,  Constantin CRISU ,  Victor POPESCU-STROE ,  Bernhard WINKLER

    IPC: G01R31/64 ,  G01R27/26 ,  G01R35/00

    Abstract: A capacitive sensor includes a first electrode structure; a second electrode structure that is counter to the first electrode structure, wherein the second electrode structure is movable relative to the first electrode structure and is capacitively coupled to the first electrode structure to form a capacitor having a capacitance that changes with a change in a distance between the first electrode structure and second electrode structure; a signal generator configured to apply an electrical signal at an input or at an output of the capacitor to induce a voltage transient response at the output of capacitor; and a diagnostic circuit configured to detect a fault in the capacitive sensor by measuring a time constant of the first voltage transient response and detecting the fault based on the time constant and based on whether the first electrical signal is the pull-in signal or the non-pull-in signal.

    CAPACITIVE MICROELECTROMECHANICAL DEVICE AND METHOD FOR FORMING A CAPACITIVE MICROELECTROMECHANICAL DEVICE
    6.
    发明申请
    CAPACITIVE MICROELECTROMECHANICAL DEVICE AND METHOD FOR FORMING A CAPACITIVE MICROELECTROMECHANICAL DEVICE 审中-公开
    电容式微电子设备及形成电容式微电子设备的方法

    公开(公告)号：US20170010301A1

    公开(公告)日：2017-01-12

    申请号：US15200299

    申请日：2016-07-01

    Applicant: Infineon Technologies AG

    Inventor： Steffen BIESELT ,  Heiko FROEHLICH ,  Thoralf KAUTZSCH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

    IPC: G01P15/125 ,  G01P15/08

    Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

    Abstract translation: 提供了一种电容式微机电装置。 电容微机电装置包括半导体衬底，支撑结构，电极元件，弹簧元件和地震块。 支撑结构，例如极，悬架或柱，固定地连接到可以包括硅的半导体衬底。 电极元件固定地连接到支撑结构。 此外，地震质量体通过弹簧元件连接到支撑结构，使得地震质量相对于电极元件可移动，可偏转或可移动。 此外，地震质量和电极元件形成具有取决于地震质量块和电极元件之间位移的电容的电容器。

    MEDIA-RESISTANT PRESSURE SENSOR FOR LARGE PRESSURE RANGES
    7.
    发明申请
    MEDIA-RESISTANT PRESSURE SENSOR FOR LARGE PRESSURE RANGES 有权

    公开(公告)号：US20240377271A1

    公开(公告)日：2024-11-14

    申请号：US18782048

    申请日：2024-07-24

    Applicant: Infineon Technologies AG

    Inventor： Rainer Markus SCHALLER ,  Thomas MUELLER ,  Bernhard WINKLER

    IPC: G01L7/08 ,  G01L19/00

    Abstract: In some embodiments, a pressure sensor comprises may comprise a housing, a flexible membrane which, together with the housing, forms a hermetically closed cavity, a sensor element arranged in the hermetically closed cavity, and a gaseous medium in the hermetically closed cavity. The sensor may measure an external pressure on the flexible membrane based on at least one of: a pressure of a gas in the hermetically closed cavity, and/or an amount of time of a time of flight of an optical pulse or a sound pulse emitted by the sensor element reflected from the flexible membrane.

    INTEGRATION OF STRESS DECOUPLING AND PARTICLE FILTER ON A SINGLE WAFER OR IN COMBINATION WITH A WAFERLEVEL PACKAGE
    8.
    发明申请
    INTEGRATION OF STRESS DECOUPLING AND PARTICLE FILTER ON A SINGLE WAFER OR IN COMBINATION WITH A WAFERLEVEL PACKAGE 有权

    公开(公告)号：US20210032097A1

    公开(公告)日：2021-02-04

    申请号：US17076250

    申请日：2020-10-21

    Applicant: Infineon Technologies AG

    Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

    IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

    DETECTING CAPACITIVE FAULTS AND SENSIVITY FAULTS IN CAPACITIVE SENSORS
    10.
    发明申请
    DETECTING CAPACITIVE FAULTS AND SENSIVITY FAULTS IN CAPACITIVE SENSORS 有权

    公开(公告)号：US20220397593A1

    公开(公告)日：2022-12-15

    申请号：US17347776

    申请日：2021-06-15

    Applicant: Infineon Technologies AG

    Inventor： Dan-Ioan-Dumitru STOICA ,  Cesare BUFFA ,  Constantin CRISU ,  Mihai-Liviu TUDOSE ,  Bernhard WINKLER

    IPC: G01R27/26 ,  G01R27/28 ,  G01R31/28

    Abstract: A capacitive sensor includes a first conductive structure; a second conductive structure that is counter to the first conductive structure, wherein the second conductive structure is movable relative to the first conductive structure in response to an external force acting thereon, wherein the second conductive structure is capacitively coupled to the first conductive structure to form a first capacitor having a first capacitance that changes with a change in a distance between the first conductive structure and second conductive structure; a signal generator configured to apply a first electrical signal step at an input or at an output of the first capacitor to induce a first voltage transient response at the output of first capacitor; and a diagnostic circuit configured to detect a fault in the capacitive sensor by measuring a first time constant of the first voltage transient response and detecting the fault based on the first time constant.

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