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公开(公告)号：US08809952B2
公开(公告)日：2014-08-19
申请号：US13707386
申请日：2012-12-06
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
IPC分类号： H01L29/78 , H01L21/3065
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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2.发明申请METHOD FOR PROCESSING A CARRIER, A CARRIER, AND A SPLIT GATE FIELD EFFECT TRANSISTOR STRUCTURE 有权用于处理载体，载体和分离栅场效应晶体管结构的方法公开(公告)号：US20150371995A1
公开(公告)日：2015-12-24
申请号：US14309968
申请日：2014-06-20
IPC分类号： H01L27/112 , H01L21/02 , H01L29/167 , H01L29/51 , H01L29/423 , H01L29/36 , H01L21/265 , H01L29/66
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。
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3.发明授权Method for processing a carrier, a carrier, and a split gate field effect transistor structure 有权用于处理载波，载波和分离栅场效应晶体管结构的方法公开(公告)号：US09202815B1
公开(公告)日：2015-12-01
申请号：US14309968
申请日：2014-06-20
IPC分类号： H01L29/66 , H01L27/112 , H01L21/265 , H01L21/02 , H01L29/51 , H01L29/423 , H01L29/36 , H01L29/167
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。
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公开(公告)号：US09166039B2
公开(公告)日：2015-10-20
申请号：US14321302
申请日：2014-07-01
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
IPC分类号： H01L29/78 , H01L21/02 , H01L29/66 , H01L21/033 , H01L21/266 , H01L29/40 , H01L29/423 , H01L29/739 , H01L29/10 , H01L29/45 , H01L29/49 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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5.发明授权公开(公告)号：US09478555B2
公开(公告)日：2016-10-25
申请号：US14927608
申请日：2015-10-30
IPC分类号： H01L27/11 , H01L27/112 , H01L21/02 , H01L29/51 , H01L23/525 , H01L29/423 , H01L21/265 , H01L21/28
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
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公开(公告)号：US20140339634A1
公开(公告)日：2014-11-20
申请号：US14321302
申请日：2014-07-01
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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公开(公告)号：US20130140632A1
公开(公告)日：2013-06-06
申请号：US13707386
申请日：2012-12-06
发明人： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
CPC分类号： H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
摘要： A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in in a region near the body zone and a second thickness in a region near the drift zone.
摘要翻译： 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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