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公开(公告)号：US20210384318A1
公开(公告)日：2021-12-09
申请号：US16894223
申请日：2020-06-05
发明人： Albert Birner , Rudolf Berger , Helmut Brech , Olaf Storbeck , Haifeng Sun , John Twynam
IPC分类号： H01L29/66 , H01L29/20 , H01L29/10 , H01L29/417 , H01L21/265 , H01L29/205 , H01L23/29 , H01L23/31 , H01L21/02 , H01L29/778 , H01L21/268
摘要： A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.
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2.发明申请公开(公告)号：US20190078211A1
公开(公告)日：2019-03-14
申请号：US15700232
申请日：2017-09-11
发明人： Matthias Kuenle , Johannes Baumgartl , Manfred Engelhardt , Christian Illemann , Francisco Javier Santos Rodriguez , Olaf Storbeck
IPC分类号： C23C16/54 , C23C16/02 , C23C16/455 , H01L21/02
摘要： A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.
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公开(公告)号：US20230155000A1
公开(公告)日：2023-05-18
申请号：US18093434
申请日：2023-01-05
发明人： Albert Birner , Rudolf Berger , Helmut Brech , Olaf Storbeck , Haifeng Sun , John Twynam
IPC分类号： H01L29/66 , H01L21/02 , H01L21/265 , H01L21/268 , H01L23/29 , H01L23/31 , H01L29/10 , H01L29/20 , H01L29/205 , H01L29/417 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/0217 , H01L21/268 , H01L21/26546 , H01L23/291 , H01L23/3171 , H01L29/205 , H01L29/1033 , H01L29/2003 , H01L29/7786 , H01L29/41725
摘要： A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.
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公开(公告)号：US11149351B2
公开(公告)日：2021-10-19
申请号：US15700232
申请日：2017-09-11
发明人： Matthias Kuenle , Johannes Baumgartl , Manfred Engelhardt , Christian Illemann , Francisco Javier Santos Rodriguez , Olaf Storbeck
IPC分类号： C23C16/54 , C23C16/455 , C30B25/12 , C23C16/458 , C23C16/46 , C23C16/02 , C30B25/10 , C30B25/14 , H01L21/02 , C30B29/06 , C30B29/36
摘要： A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.
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公开(公告)号：US11581418B2
公开(公告)日：2023-02-14
申请号：US16894223
申请日：2020-06-05
发明人： Albert Birner , Rudolf Berger , Helmut Brech , Olaf Storbeck , Haifeng Sun , John Twynam
IPC分类号： H01L29/66 , H01L21/02 , H01L21/265 , H01L21/268 , H01L23/29 , H01L23/31 , H01L29/10 , H01L29/20 , H01L29/205 , H01L29/417 , H01L29/778
摘要： A semiconductor body having a base carrier portion and a type III-nitride semiconductor portion is provided. The type III-nitride semiconductor portion includes a heterojunction and two-dimensional charge carrier gas. One or more ohmic contacts are formed in the type III-nitride semiconductor portion, the ohmic contacts forming an ohmic connection with the two-dimensional charge carrier gas. A gate structure is configured to control a conductive state of the two-dimensional charge carrier gas. Forming the one or more ohmic contacts comprises forming a structured laser-reflective mask on the upper surface of the type III-nitride semiconductor portion, implanting dopant atoms into the upper surface of the type III-nitride semiconductor portion, and performing a laser thermal anneal that activates the implanted dopant atoms.
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公开(公告)号：US20220246744A1
公开(公告)日：2022-08-04
申请号：US17590685
申请日：2022-02-01
摘要： A transistor device is provided. In an example, the transistor device includes a semiconductor body having a first main surface, a second main surface opposite to the first main surface. The transistor device further includes a transistor cell array including a plurality of transistor cells. The transistor cell array includes a first load electrode over the first main surface. The first load electrode is electrically connected to the plurality of transistor cells. The transistor cell array further includes a second load electrode over the second main surface. The second load electrode is electrically connected to the plurality of transistor cells. The plurality of transistor cells includes at least one control electrode including carbon.
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公开(公告)号：US20190385842A1
公开(公告)日：2019-12-19
申请号：US16426051
申请日：2019-05-30
发明人： Joachim Hirschler , Georg Ehrentraut , Christoffer Erbert , Klaus Goeschl , Markus Heinrici , Michael Hutzler , Wolfgang Koell , Stefan Krivec , Ingmar Neumann , Mathias Plappert , Michael Roesner , Olaf Storbeck
摘要： In one aspect, a method of forming a silicon-insulator layer is provided. The method includes arranging a silicon structure in a plasma etch process chamber and applying a plasma to the silicon structure in the plasma etch process chamber at a temperature of the silicon structure equal to or below 100° C. The plasma includes a component and a halogen derivate, thereby forming the silicon-insulator layer. The silicon-insulator layer includes silicon and the component. In another aspect, a semiconductor device is provided having a silicon-insulator layer formed by the method.
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8.发明申请METHOD FOR PROCESSING A CARRIER, A CARRIER, AND A SPLIT GATE FIELD EFFECT TRANSISTOR STRUCTURE 有权用于处理载体，载体和分离栅场效应晶体管结构的方法公开(公告)号：US20150371995A1
公开(公告)日：2015-12-24
申请号：US14309968
申请日：2014-06-20
IPC分类号： H01L27/112 , H01L21/02 , H01L29/167 , H01L29/51 , H01L29/423 , H01L29/36 , H01L21/265 , H01L29/66
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。
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9.发明授权Method for processing a carrier, a carrier, and a split gate field effect transistor structure 有权用于处理载波，载波和分离栅场效应晶体管结构的方法公开(公告)号：US09202815B1
公开(公告)日：2015-12-01
申请号：US14309968
申请日：2014-06-20
IPC分类号： H01L29/66 , H01L27/112 , H01L21/265 , H01L21/02 , H01L29/51 , H01L29/423 , H01L29/36 , H01L29/167
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。
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公开(公告)号：US20230127662A1
公开(公告)日：2023-04-27
申请号：US18047912
申请日：2022-10-19
发明人： Stefan Hampl , Kerstin Kämmer , Olaf Storbeck , Ines Uhlig
IPC分类号： H05B3/44
摘要： An IR (infrared) radiation source includes a sealed cavity structure enclosing a vacuum chamber having a low atmospheric pressure, wherein the sealed cavity structure includes a thermally and electrically insulating material for enclosing the vacuum chamber, heating filaments extending in the vacuum chamber between opposing electrode regions at opposing wall regions of the vacuum chamber, wherein the heating filaments are electrically connected in parallel, and wherein the heating filaments and the electrode regions have a highly electrically conductive material, and an optical isolation structure adjacent to the vacuum chamber for optically confining the IR radiation and providing a predominant propagation direction of the IR radiation.
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