Invention Application
- Patent Title: APPARATUS AND METHOD FOR CHEMICAL VAPOR DEPOSITION PROCESS FOR SEMICONDUCTOR SUBSTRATES
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Application No.: US15700232Application Date: 2017-09-11
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Publication No.: US20190078211A1Publication Date: 2019-03-14
- Inventor: Matthias Kuenle , Johannes Baumgartl , Manfred Engelhardt , Christian Illemann , Francisco Javier Santos Rodriguez , Olaf Storbeck
- Applicant: Infineon Technologies AG
- Main IPC: C23C16/54
- IPC: C23C16/54 ; C23C16/02 ; C23C16/455 ; H01L21/02
Abstract:
A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.
Public/Granted literature
- US11149351B2 Apparatus and method for chemical vapor deposition process for semiconductor substrates Public/Granted day:2021-10-19
Information query
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