公开(公告)号：US10043640B2

公开(公告)日：2018-08-07

申请号：US14636238

申请日：2015-03-03

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt

IPC: C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/513

Abstract: In accordance with an embodiment of the present invention, a process tool includes a chuck configured to hold a substrate. The chuck is disposed in a chamber. The process tool further includes a shielding unit with a central opening. The shielding unit is disposed in the chamber over the chuck.

公开(公告)号：US09679773B1

公开(公告)日：2017-06-13

申请号：US15068762

申请日：2016-03-14

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt

IPC: H01L21/02 ,  H01L21/225 ,  H01L21/268 ,  C01B31/02

CPC classification number: H01L21/225 ,  C01B2202/22 ,  H01L21/223 ,  H01L21/268

Abstract: According to various embodiments, a method may include: disposing a dopant in a semiconductor region; forming a radiation absorption layer including or formed from at least one allotrope of carbon over at least a portion of the semiconductor region; and activating the dopant at least partially by irradiating the radiation absorption layer at least partially with electromagnetic radiation to heat the semiconductor region at least partially.

公开(公告)号：US20170154808A1

公开(公告)日：2017-06-01

申请号：US14953362

申请日：2015-11-29

Applicant: Infineon Technologies AG

Inventor： Iris Moder ,  Ingo Muri ,  Johannes Baumgartl ,  Oliver Hellmund ,  Manfred Engelhardt ,  Hans-Joachim Schulze

IPC: H01L21/762

CPC classification number: H01L21/76267 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/02647 ,  H01L21/2022 ,  H01L21/31144 ,  H01L21/7621 ,  H01L21/7624 ,  H01L21/76248 ,  H01L21/76264 ,  H01L21/76272 ,  H01L21/76281 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76289 ,  H01L21/76297

Abstract: A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.

公开(公告)号：US09627287B2

公开(公告)日：2017-04-18

申请号：US14058213

申请日：2013-10-18

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt ,  Edward Fuergut ,  Hannes Eder

IPC: H01L21/762 ,  H01L23/28 ,  H01L21/78 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/28 ,  H01L21/56 ,  H01L21/561 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3185 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a thinned encapsulated chip structure, wherein the method comprises providing a separation structure arranged within an electronic chip, encapsulating part of the electronic chip by an encapsulating structure, and thinning selectively the electronic chip partially encapsulated by the encapsulating structure so that the encapsulating structure remains with a larger thickness than the thinned electronic chip, wherein the separation structure functions as a thinning stop.

公开(公告)号：US20160240429A1

公开(公告)日：2016-08-18

申请号：US14621082

申请日：2015-02-12

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/76227 ,  H01L21/02129 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76224 ,  H01L21/76801 ,  H01L21/76804

Abstract: A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. The auxiliary layer is removed to form the dielectric structure having a negative taper. The dielectric structure has a top critical dimension greater than a bottom critical dimension.

Abstract translation: 形成电介质结构的方法包括在衬底上形成辅助层，并在辅助层内形成孔。 填充材料沉积在孔中。 去除辅助层以形成具有负锥度的电介质结构。 电介质结构具有大于底部临界尺寸的顶部临界尺寸。

公开(公告)号：US09391263B2

公开(公告)日：2016-07-12

申请号：US14188112

申请日：2014-02-24

Applicant: Infineon Technologies AG

Inventor： Carsten von Koblinski ,  Volker Strutz ,  Manfred Engelhardt

IPC: H01L23/31 ,  H01L43/04 ,  H01L21/78 ,  H01L21/84 ,  H01L27/12 ,  H01L27/22 ,  H01L43/06 ,  H01L43/12 ,  H01L23/00 ,  H01L43/14

CPC classification number: H01L43/14 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3178 ,  H01L23/3185 ,  H01L24/06 ,  H01L27/12 ,  H01L27/22 ,  H01L43/04 ,  H01L43/065 ,  H01L43/12 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.

Abstract translation: 在一个实施例中，半导体器件包括玻璃衬底，设置在玻璃衬底上的半导体衬底和设置在半导体衬底内和/或之上的磁传感器。

公开(公告)号：US20150279740A1

公开(公告)日：2015-10-01

申请号：US14226666

申请日：2014-03-26

Applicant: Infineon Technologies AG

Inventor： Michael Roesner ,  Manfred Engelhardt ,  Johann Schmid ,  Gudrun Stranzl ,  Joachim Hirschler

IPC: H01L21/78 ,  H01L21/768

CPC classification number: H01L21/7806 ,  H01L21/02057 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/78 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/10157 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes attaching a substrate to a carrier using an adhesive component and forming a through trench through the substrate to expose the adhesive component. At least a portion of the adhesive component is etched and a metal layer is formed over sidewalls of the through trench.

Abstract translation: 根据本发明的实施例，一种形成半导体器件的方法包括：使用粘合剂组件将衬底附着到载体上，并通过衬底形成通孔以暴露粘合剂组分。 蚀刻粘合剂组分的至少一部分，并且在通孔的侧壁上形成金属层。

公开(公告)号：US09012325B2

公开(公告)日：2015-04-21

申请号：US14058317

申请日：2013-10-21

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/78 ,  H01L21/308

CPC classification number: H01L21/28506 ,  H01L21/3086 ,  H01L21/78

Abstract: One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a opening partially through a semiconductor substrate, the opening including an upper portion and a lower portion; forming a first dielectric layer over a sidewall surface of the upper portion, wherein the first dielectric layer does not overlie a sidewall surface of the lower portion; and forming a conductive material over a sidewall surface of the first dielectric layer, the conductive material not being in direct contact with a sidewall surface of the lower portion.

Abstract translation: 一个或多个实施例涉及制造半导体结构的方法，包括：部分地通过半导体衬底形成开口，所述开口包括上部和下部; 在所述上部的侧壁表面上形成第一电介质层，其中所述第一介电层不覆盖所述下部的侧壁表面; 以及在所述第一介电层的侧壁表面上形成导电材料，所述导电材料不与所述下部的侧壁表面直接接触。

公开(公告)号：US20190078211A1

公开(公告)日：2019-03-14

申请号：US15700232

申请日：2017-09-11

Applicant: Infineon Technologies AG

Inventor： Matthias Kuenle ,  Johannes Baumgartl ,  Manfred Engelhardt ,  Christian Illemann ,  Francisco Javier Santos Rodriguez ,  Olaf Storbeck

IPC: C23C16/54 ,  C23C16/02 ,  C23C16/455 ,  H01L21/02

Abstract: A CVD reactor, including a deposition chamber housing a first susceptor and a second susceptor, the first susceptor having a cavity for receiving a first substrate, the first substrate having a front surface and a back surface, the second susceptor having a cavity for receiving a second substrate, the second substrate having a front surface and a back surface, and the first susceptor and the second susceptor are disposed so that the front surface of the first substrate is opposite to the front surface of the second substrate thereby forming a portion of a gas flow channel.

公开(公告)号：US10157765B2

公开(公告)日：2018-12-18

申请号：US15359620

申请日：2016-11-23

Applicant: Infineon Technologies AG

Inventor： Gudrun Stranzl ,  Martin Zgaga ,  Rainer Leuschner ,  Bernhard Goller ,  Bernhard Boche ,  Manfred Engelhardt ,  Hermann Wendt ,  Bernd Noehammer ,  Karl Mayer ,  Michael Roesner ,  Monika Cornelia Voerckel

IPC: H01L23/498 ,  H01L21/683 ,  H01L21/283 ,  H01L21/78 ,  H01L21/033 ,  H01L21/285 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.