公开(公告)号：US09478555B2

公开(公告)日：2016-10-25

申请号：US14927608

申请日：2015-10-30

申请人： Infineon Technologies AG

发明人： Kerstin Kaemmer ,  Thomas Bertrams ,  Henning Feick ,  Olaf Storbeck ,  Matthias Schmeide

IPC分类号： H01L27/11 ,  H01L27/112 ,  H01L21/02 ,  H01L29/51 ,  H01L23/525 ,  H01L29/423 ,  H01L21/265 ,  H01L21/28

CPC分类号： H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

公开(公告)号：US20150371995A1

公开(公告)日：2015-12-24

申请号：US14309968

申请日：2014-06-20

申请人： Infineon Technologies AG

发明人： Kerstin Kaemmer ,  Thomas Bertrams ,  Henning Feick ,  Olaf Storbeck ,  Matthias Schmeide

IPC分类号： H01L27/112 ,  H01L21/02 ,  H01L29/167 ,  H01L29/51 ,  H01L29/423 ,  H01L29/36 ,  H01L21/265 ,  H01L29/66

CPC分类号： H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。

公开(公告)号：US09202815B1

公开(公告)日：2015-12-01

申请号：US14309968

申请日：2014-06-20

申请人： Infineon Technologies AG

发明人： Kerstin Kaemmer ,  Thomas Bertrams ,  Henning Feick ,  Olaf Storbeck ,  Matthias Schmeide

IPC分类号： H01L29/66 ,  H01L27/112 ,  H01L21/265 ,  H01L21/02 ,  H01L29/51 ,  H01L29/423 ,  H01L29/36 ,  H01L29/167

CPC分类号： H01L27/11206 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/2822 ,  H01L23/5256 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。

公开(公告)号：US20150235864A1

公开(公告)日：2015-08-20

申请号：US14181751

申请日：2014-02-17

申请人： Infineon Technologies AG

发明人： Mirko Vogt ,  Felix Braun ,  Jens Schneider ,  Bee Kim Hong ,  Matthias Schmeide

IPC分类号： H01L21/311 ,  H01L21/266 ,  H01L21/3213

CPC分类号： H01L21/31144 ,  H01L21/266 ,  H01L21/31155 ,  H01L21/32139

摘要： A method for processing a layer may include: providing a patterned carbon layer over a layer or over a carrier; and carrying out an ion implantation through the patterned carbon layer into the layer or into the carrier.

摘要翻译： 用于处理层的方法可以包括：在层上或载体上提供图案化碳层; 并且通过图案化的碳层进行离子注入到该层或载体中。