发明申请
US20150371995A1 METHOD FOR PROCESSING A CARRIER, A CARRIER, AND A SPLIT GATE FIELD EFFECT TRANSISTOR STRUCTURE
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用于处理载体，载体和分离栅场效应晶体管结构的方法
- 专利标题： METHOD FOR PROCESSING A CARRIER, A CARRIER, AND A SPLIT GATE FIELD EFFECT TRANSISTOR STRUCTURE
- 专利标题（中）： 用于处理载体，载体和分离栅场效应晶体管结构的方法
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申请号： US14309968申请日： 2014-06-20
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公开(公告)号： US20150371995A1公开(公告)日： 2015-12-24
- 发明人: Kerstin Kaemmer , Thomas Bertrams , Henning Feick , Olaf Storbeck , Matthias Schmeide
- 申请人： Infineon Technologies AG
- 主分类号： H01L27/112
- IPC分类号： H01L27/112 ; H01L21/02 ; H01L29/167 ; H01L29/51 ; H01L29/423 ; H01L29/36 ; H01L21/265 ; H01L29/66
摘要：
According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
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